价 格: | 面议 | |
品牌: | FREESCALE/飞思卡尔 | |
型号: | FDT457 | |
种类: | 结型(JFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | S/开关 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 | |
开启电压: | 20(V) | |
夹断电压: | 30(V) | |
跨导: | 20(μS) | |
极间电容: | 235(pF) | |
低频噪声系数: | 30(dB) | |
漏极电流: | 25(mA) | |
耗散功率: | 30(mW) |
dzsc/18/8603/18860336.jpg
FDT457N
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
5 A, 30 V. RDS(ON)
= 0.06 Ω @ VGS = 10 V
RDS(ON)
= 0.090 Ω @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON)
.
High power and current handling capability in a widely used
surface mount package.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.
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