| 价 格: | 288.00 | |
| 加工定制: | 是 | |
| 品牌/商标: | LS/产电 | |
| 型号/规格: | LEF75G1202 | |
| 应用范围: | 功率 | |
| 材料: | 硅(Si) | |
| 极性: | NPN型 | |
| 击穿电压VCEO: | 1200(V) | |
| 集电极允许电流ICM: | 75(A) | |
| 集电极耗散功率PCM: | 400(W) | |
| 截止频率fT: | 40KHz(MHz) | |
| 结构: | 点接触型 | |
| 封装形式: | 功率型 | |
| 封装材料: | 树脂封装 |
dzsc/18/8594/18859496.jpg
LS产电(原LG电子)针对环保节能新型工业市场推出的4-pack Full-Bridge(四单元全桥式)产品。这些模块设计灵活,性能优越,可靠性高,价格同比下降20%以上,可以满足不同客户的要求。提标准封装尺寸(82mm×37.4mm×21.2mm),都采用的IGBT技术,并采用焊针式、绝缘基板、树脂外壳封装。提供600V,1200V两种电压,50A,75A,100A,150A及以上多种电流选择。主要应用于逆变电焊机、UPS/EPS、感应加热器等行业。
欢迎电话/电邮垂询和索取技术参数表。
垂询请致电153 0658 9109杭州控释科技有限公司裴正为
"2-Pack IGBT LSIS 欢迎垂询153 0658 9109 杭州裴正为PackageVCES[V]IC[A]Part NumberFrequencyVCE(sat)[V]typ@25℃Data sheetSUSPM160075LUH75G602Z<=40kHz2.5欢 迎 电 邮 索 取100LUH100G602Z2.575LUH75G603Z<=20kHz1.45100LUH100G603Z1.45150LUH150G603Z1.45200LUH200G603Z1.45120050LUH50G1201Z<=20kHz1.775LUH75G1201Z1.92100LUH100G1201Z1.9275LUH75G1202Z<=40kHz3.1100LUH100G1202Z3.375LUH75G1203Z<=20kHz1.7100LUH100G1203Z1.7170050LUH50G1203Z<=20kHz275LUH75G1203Z2SUSPM2600300LVH300G603Z<=20kHz1.45400LVH400G603Z1.451200150LVH150G1201Z<=20kHz2200LVH200G1201Z2.13150LVH150G1202Z<=40kHz3.1150LVH150G1203Z<=20kHz1.7200LVH200G1203Z1.71700100LVH100G1703Z<=20kHz2150LVH150G1703Z2SUSPM3600300LWH300G603<=20kHz1.45400LWH400G6031.451200150LWH150G1201<=20kHz2200LWH200G12012.13300LWH300G12012150LWH150G1202<=40kHz3.1200LWH200G12023.3200LWH200G1203<=20kHz1.7300LWH300G12031.7400LWH400G12071.71700200LWH200G1703<=20kHz2300LWH300G17032
dzsc/18/8618/18861809.jpgAbsolute Maximum Ratings TC = 25°C unless otherwise notedInternal Circuit & Pin Description(Note *1) Option : Included ± 28 V Zener Diode between Gate and Emitter.(Note *2) The Maximum junction temperature of chip is 150 °C.Item Symbol Conditions Value UnitsIGBTVCES 1200 VVGES ± 20 VIC@Tj = 150 °C, TC = 25 °C, Continuous 150 A@Tj = 150°C, TC =80°C, Continuous 75 AICM @TC = 80 °C, tP = 1 ms 150 ATSC Chip Level, @Tj = 150 °C, VGE = 15 V, VCES < 1200 V - μsTj Operating Junction Temperature *(2) -40~125 °CPD@Tj = 150 °C, TC = 25 °C 800 W@Tj = 150 °C, TC = 80 °C 400 WDiodeVRRM 1200 VIF 75 AIFRM tP = 1 ms 150 ATj Operating Junction Temperature *(2) -40~125 °CModuleTstg Storage Temperature -40~125 °CViso @ AC 1minute 2500 VMt Main Terminal Mounting torque (M5) 2.5~5 NmMS Heat sink Mounting torque (M6) 3.0~5 NmW Weight 180 g