价 格: | 1.15 | |
品牌/商标: | 0N/安森美 | |
型号/规格: | MBRS4201T3G | |
产品类型: | 肖特基管 | |
结构: | 点接触型 | |
材料: | 硅(Si) | |
封装形式: | 贴片型 | |
封装材料: | 玻璃封装 | |
正向直流电流IF: | 4(A) | |
反向电压: | 200(V) |
200V, 4A Schottky Fast Soft−Recovery Power Rectifier
SMC Power Surface Mount Package
Features
• Lower Forward Voltage than any Ultrafast Rectifier:
VF < 0.61 V at 150°C
• Fast Switching Speed: Reverse Recovery Time (tRR) < 35 ns
• Soft Recovery Characteristics: Softness Factor (tb/ta) 1
• Highly Stable Over Temperature
• Pb−Free Package is Available
Benefits
• Significantly Reduced EMI
• Eliminates the Need of Snubber Circuits
• Low Switching and Heat Losses
• Improved Thermal Management
Applications
• Engine and Convenience Control Systems
• Motor Controls
• Battery Chargers and Switching Power Supplies
Mechanical Characteristics
• Small Compact Surface Mount Package with J–Bend Leads
• Rectangular Package for Automated Handling
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
• Polarity: Notch in Plastic Body Indicates Cathode Lead
dzsc/18/8693/18869347.jpg变容二极管(Varactor Diodes)又称"可变电抗二极管"。是一种利用PN结电容(势垒电容)与其反向偏置电压Vr的依赖关系及原理制成的二极管。所用材料多为硅或砷化镓单晶,并采用外延工艺技术。反偏电压愈大,则结电容愈小。变容二极管具有与衬底材料电阻率有关的串联电阻。主要参量是:零偏结电容、零偏压优值、反向击穿电压、中心反向偏压、标称电容、电容变化范围(以皮法为单位)以及截止频率等,对于不同用途,应选用不同C和Vr特性的变容二极管,如有专用于谐振电路调谐的电调变容二极管、适用于参放的参放变容二极管以及用于固体功率源中倍频、移相的功率阶跃变容二极管等。 用于自动频率控制(AFC)和调谐用的小功率二极管称变容二极管。日本厂商方面也有其它许多叫法。通过施加反向电压, 使其PN结的静电容量发生变化。因此,被使用于自动频率控制、扫描振荡、调频和调谐等用途。通常,虽然是采用硅的扩散型二极管,但是也可采用合金扩散型、外延结合型、双重扩散型等特殊制作的二极管,因为这些二极管对于电压而言,其静电容量的变化率特别大。结电容随反向电压VR变化,取代可变电容,用作调谐回路、振荡电路、锁相环路,常用于...
FEATURES·power switching applicationsdzsc/18/8698/18869879.jpg