价 格: | 5.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SD1577 | |
应用范围: | 功率 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | TO-3PFa | |
封装材料: | 塑料封装 |
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontaloutput applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 1500 | V |
VCES | Collector-Emitter Voltage | 1500 | V |
VCEO | Collector-Emitter Voltage | 700 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current- Continuous | 5 | A |
ICP | CollectorCurrent-Peak | 17 | A |
IBP | BaseCurrent-Peak | 3.5 | A |
IBP | Reverse Base Current-Peak | -2.5 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 3 | W |
Collector Power Dissipation @ TC=25℃ | 100 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 1mA ; IC= 0 | 6 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4.5A; IB= 2A |
|
| 2.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 4.5A; IB= 2A |
|
| 1.3 | V |
ICBO | Collector Cutoff Current | VCB= 750V ; IE= 0 |
|
| 50 | μA |
VCB= 1500V ; IE= 0 |
|
| 1.0 | mA | ||
IEBO | Emitter Cutoff Current | VEB= 6V ; IC= 0 |
|
| 1.0 | mA |
hFE | DC Current Gain | IC= 4A ; VCE= 10V | 4 |
| 15 |
|
fT | Current-Gain—Bandwidth Product | IC= 0.5A ; VCE= 10V, ftest= 0.5MHz |
| 2 |
| MHz |
Switching times | ||||||
tstg | Storage Time | IC= 4A , IB1(end)= 1.5A ; LB= 10μH |
|
| 11 | μs |
tf | Fall Time |
|
| 1.0 | μs |