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特价现货供应 高速开关二极管MMBD914LT1G

价 格: 0.02
产品类型:快恢复二极管
品牌/商标:ON/长电
型号/规格:MMBD914LT1G
结构:平面型
材料:硅(Si)
封装形式:SOT-23
封装材料:塑料封装
功率特性:中功率
频率特性:中频
发光颜色:橙色
LED封装:无色透明(T)
出光面特征:圆灯
发光强度角分布:标准型
反向电压VR:100(V)
正向直流电流IF:200(mA)

特价现货供应 高速开关二极管MMBD914LT1G

MMBD914LT1/D
MMBD914LT1
Preferred Device
High−Speed Switching
Diode
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR 100 Vdc
Forward Current IF 200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD 225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R JA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD 300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R JA 417 °C/W
Junction and Storage Temperature
Range
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 Adc)
V(BR) 100 − Vdc
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
IR


25
5.0
nAdc
Adc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT − 4.0 pF
Forward Voltage
(IF = 10 mAdc)
VF − 1.0 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr − 4.0 ns
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
MMBD914LT1 SOT−23 3000/Tape & Reel
MARKING DIAGRAM
1
ANODE
3
CATHODE
Prefe

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东莞市讯微电子有限公司
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  • 所属城市:广东 东莞
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