价 格: | 0.10 | |
产品类型: | 开关管 | |
品牌/商标: | NXP/ON | |
型号/规格: | BAV70W | |
结构: | 平面型 | |
材料: | 硅(Si) | |
封装形式: | SOT-323 | |
封装材料: | 塑料封装 | |
功率特性: | 中功率 | |
频率特性: | 中频 | |
反向电压VR: | 75(V) | |
正向直流电流IF: | 2000(mA) |
特价现货供应 开关二极管BAV70W
Surface Mount Small Signal Dual Diodes
Kleinsignal-Doppel-Dioden für die Oberflächenmontage
Version 2009-09-28
Dimensions - Maße [mm]
1 = A1 2 = A2 3 = C1/C2
Power dissipation
Verlustleistung
200 mW
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
75 V
Plastic case
Kunststoffgehäuse
SOT-323
Weight approx. – Gewicht ca. 0.01 g
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
per diode / pro Diode BAV70W
Power dissipation − Verlustleistung 1) Ptot 200 mW 1)
Max. average forward current (dc)
Dauergrenzstrom
IFAV
IFAV
175 mA 2)
100mA 1) 2)
Repetitive peak forward current
Periodischer Spitzenstrom
IFRM 300 mA 2)
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp ≤ 1 s
tp ≤ 1 ms
tp ≤ 1 μs
IFSM
IFSM
IFSM
0.5 A
1 A
2 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM 75 V
Max. operating junction temperature – Max. Sperrschichttemperatur Tj 150°C
Storage temperature – Lagerungstemperatur TS - 55…+ 150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Forward voltage
Durchlass-Spannung
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VF
VF
VF
VF
< 715 mV
< 855 mV
< 1.0 V
< 1.25 V
Leakage current 3)
Sperrstrom
VR = 75 V Tj = 25°C IR < 5 μA
VR = 25 V
VR = 75 V Tj = 150°C IR
IR
< 60 μA
< 100 μA
1 Both diodes loaded − Beide Dioden belastet
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf
dzsc/18/8432/18843240.jpg特价现货供应 整流二极管HER103Technical SpecificationsDiodes Inc. HER103-TCapacitance20.0 pFCurrent Rating1.00 AVoltage Rating (DC)200 VOutput Current1.00 A (max)Case / PackageDO-41Lead-Free StatusExemptMounting TypeThrough HolePackagingCut Tape (CT)PolarityStandardRoHSCompliant
dzsc/18/8438/18843831.jpg特价现货供应 开关二极管BAW56?2001 Fairchild Semiconductor CorporationThermal CharacteristicsElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Value UnitsVRRM Maximum Repetitive Reverse Voltage 85 VIF(AV) Average Rectified Forward Current 200 mAIFSM Non-repetitive Peak Forward Surge CurrentPulse Width = 1.0 secondPulse Width = 1.0 microsecond1.02.0AATstg Storage Temperature Range -55 to +150 °CTJ Operating Junction Temperature 150 °CSymbol Parameter Value UnitsPD Power Dissipation 350 mWRθJA Thermal Resistance, Junction to Ambient 357 °C/W1 23A11 23Connection Diagram312SOT-23Symbol Parameter Test Conditions Min Max UnitsVR Breakdown Voltage IR = 5.0 μA 85 VVF Forward Voltage IF = 1.0 mAIF = 10 mAIF = 50 mAIF = 150 mA7158551.01.25mVmVVVIR Reverse Current VR = 70 VVR = 25 V, TA = 150°CVR = 70 V, TA = 150°C2.53050μAμAμACT Total Capacitance VR = 0, f = 1.0 MHz 2.0 pFtrr Reverse Recovery Time IF ...