价 格: | 0.10 | |
产品类型: | 开关管 | |
品牌/商标: | NXP/恩智浦 | |
型号/规格: | BAS316 | |
结构: | 平面型 | |
材料: | 硅(Si) | |
封装形式: | SOD-323 | |
封装材料: | 塑料封装 | |
功率特性: | 中功率 | |
频率特性: | 中频 | |
反向电压VR: | 100(V) | |
正向直流电流IF: | 250(mA) |
高速开关二极管BAS316
High-speed diode BAS316
FEATURES
•Very small plastic SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage: max. 100 V
•Repetitive peak reverse voltage: max. 100 V
•Repetitive peak forward current: max. 500 mA.
APPLICATIONS
•High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD323) and symbol.Marking code: A6.Cathode side indicated by a bar.handbook, halfpageMAM157ka
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.Ts is the temperature at the soldering point of the cathode tab.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BAS316
−
plastic surface mounted package; 2 leads
SOD323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
100
V
VR
continuous reverse voltage
−
100
V
IF
continuous forward current
Ts = 90 °C; note 1; see Fig.2
−
250
mA
IFRM
repetitive peak forward current
−
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 μs
−
4
A
t = 1 ms
−
1
A
t = 1 s
−
0.5
A
Ptot
total power dissipation
Ts = 90 °C; note 1
−
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
2004 Feb 04 3
NXP Semiconductors Product data sheet
High-speed diode BAS316
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.Soldering point of the cathode tab.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.3
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 50 mA
1
V
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR = 25 V
30
nA
VR = 75 V
1
μA
VR = 25 V; Tj = 150 °C
30
μA
VR = 75 V; Tj = 150 °C
50
μA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns; see Fig.8
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-s)
thermal resistance from junction to soldering point
note
特价现货供应 开关二极管BAVSmall Signal DiodeAbsolute Maximum Ratings * TA = 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of the diode may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal CharacteristicsElectrical Characteristics TA=25°C unless otherwise notedSymbol Parameter Value UnitsVRRM Maximum Repetitive Reverse Voltage BAV70BAV747050VVIF(AV) Average Rectified Forward Current 200 mAIFSM Non-repetitive Peak Forward Surge CurrentPulse Width = 1.0 secondPulse Width = 1.0 microsecond1.02.0AATSTG Storage Temperature Range -55 to +150 °CTJ Operating Junction Temperature 150 °CSymbol Parameter Value UnitsPD Power Dissipation 350 mWRθJA Thermal Resistance, Junction to Ambient 357 °C/WSymbol Parameter Test Conditions Min. Max. UnitsVR Bre...
高速开关二极管Switching diode1SS355zApplications zDimensions (Unit : mm) zLand size figure (Unit : mm)High speed switchingzFeatures1) Ultra small mold type.(UMD2)2) High reliability.zConstructionSilicon epitaxial planarzStructurezTaping specification (Unit : mm)zAbsolute maximum ratings (Ta=25°C)zElectrical characteristics (Ta=25°C)UMD22.10.8MIN.0.9MIN.Symbol UnitVRM VVR VIFM mAIo mAIsurge mATj ℃Tstg ℃Surge current (t=1s) 500Junction temperatureStorage temperature150-55 to +150Limits8010090225ParameterReverse voltage (DC)Average rectified forward currentReverse voltage (repetitive peak)Forward currentSymbol Min. Typ. Max. Unit ConditionsVF - - 1.2 V IF=100mAIR - - 0.1 μA VR=80VCt - - 3 pF VR=0.5V , f=1MHztrr - - 4 ns VR=6V , IF=10mA , RL=100ΩReverse currentParameterForward voltageReverse recovery timeCapacitance between terminalsROHM : UMD2JEITA : SC-90/AJEDEC : S0D-323dot (year week factory)0.3±0.050.7±0.2 0.10.1±0.1 0.051.7&pl...