价 格: | 0.10 | |
产品类型: | 开关管 | |
品牌/商标: | NXP/ON | |
型号/规格: | BAV99W | |
结构: | 平面型 | |
材料: | 硅(Si) | |
封装形式: | SOT-23 | |
封装材料: | 塑料封装 | |
功率特性: | 中功率 | |
频率特性: | 中频 | |
发光颜色: | 红色 | |
反向电压VR: | 100(V) | |
正向直流电流IF: | 300(mA) |
特价现货供应 开关二极管BAV99W
Features
! High Conductance L
! Fast Switching A
! Surface Mount Package Ideally Suited for
Automatic Insertion
! For General Purpose and Switching B C
! Plastic Material – UL Recognition Flammability
Classification 94V-O M
E D
H
Mechanical Data
! Case: SOT-323, Molded Plastic K
! Terminals: Plated Leads Solderable per J
MIL-STD-202, Method 208 G
! Polarity: See Diagram
! Weight: 0.006 grams (approx.)
! Mounting Position: Any
! Marking: JG TOP VIEW
Maximum Ratings @TA=25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
Forward Continuous Current (Note 1) IF 300 mA
Average Rectified Output Current (Note 1) IO 150 mA
Peak Forward Surge Current (Note 1) @ t < 1.0μs IFSM 2.0 A
Power Dissipation (Note 1) Pd 200 mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1) R JA 625 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Forward Voltage VF
—
—
0.855
1.0
V
@ IF = 10mA
@ IF = 50mA
Reverse Leakage Current IR — 2.5 μA @ VR = 75V
Junction Capacitance Cj — 2.0 pF VR = 0V, f = 1.0MHz
Reverse Recovery Time trr — 6.0 nS
低电压高速开关二极管Diode Silicon Epitaxial Schottky Barrier Type1SS357Low Voltage High Speed Switchingz Low forward voltage : VF (3) = 0.54V (typ.)z Low reverse current : IR = 5μA (max)z Small package : SC-70Absolute Maximum Ratings (Ta = 25°C)Characteristic Symbol Rating UnitMaximum (peak) reverse voltage VRM 45 VReverse voltage VR 40 VMaximum (peak) forward current IFM 300 mAAverage forward current IO 100 mASurge current (10ms) IFSM 1 APower dissipation P 200* mWJunction temperature Tj 125 °CStorage temperature range Tstg −55~125 °CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e. operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability H...
dzsc/18/8395/18839586.jpgUF5404品牌:Invac封装形式:DO引脚数量:2温度范围:最小 -65 °C | 150 °C文件大小:86 KB功能应用:400 V, 3 A ultra-fast silicon rectifierUF5404品牌:Invac封装形式:DO引脚数量:2温度范围:最小 -65 °C | 150 °C文件大小:86 KB功能应用:400 V, 3 A ultra-fast silicon rectifier