是否提供加工定制:否 | 品牌:EM | 型号:EM78P156 |
封装:DIP/SOP | 批号:2011 | 类型:单片机 |
EM78P156N is an 8-bit microprocessor designed and developed with low-power, high-speed CMOS
technology.. It is equipped with 1K*13-bits Electrical One Time Programmable Read Only Memory
(OTP-ROM). It provides three PROTECTION bits to prevent user’s code in the OTP memory from being
intruded. 8 OPTION bits are also available to meet user’s requirements.
With its OTP-ROM feature, the EM78P156N is able to offer a convenient way of developing and verifying
user’s programs. Moreover, user can take advantage of EMC Writer to easily program his development
code.
2. FEATURES
• Operating voltage range : 2.5V~5.5V
• Operating temperature range: -40°C~85°C
• Operating frequency rang (base on 2 clocks ):
* Crystal mode: DC~20MHz at 5V, DC~8MHz at 3V, DC~4MHz at 2.5V.
* ERC mode: DC~4MHz at 5V, DC~4MHz at 3V, DC~4MHz at 2.5V.
• Low power consumption:
* Less then 2 mA at 5V/4MHz
* Typically 20 µA at 3V/32KHz
* Typically 1 µA during sleep mode
• 1K × 13 bits on chip ROM
• One security register to prevent intrusion of OTP memory codes
• One configuration register to accommodate user’s requirements
• 48× 8 bits on chip registers (SRAM, general purpose register)
• 2 bi-directional I/O ports
• 5 level stacks for subroutine nesting
• 8-bit real time clock/counter (TCC) with selective signal sources, trigger edges, and overflow interrupt
• Two clocks per instruction cycle
• Power down (SLEEP) mode
• Three available interruptions
* TCC overflow interrupt
* Input-port status changed interrupt (wake up from sleep mode)
* External interrupt
• Programmable free running watchdog timer
• 8 programmable pull-high pins
• 7 programmable pull-down pins
• 8 programmable open-drain pins
• 2 programmable R-option pins
• Package types:
* 18 pin DIP 300mil : EM78P156NP
* 18 pin SOP 300mil : EM78P156NM
* 20 pin SSOP 209mil : EM78P156NAS
品牌:0N/安森美型号:MMBT3904应用范围:开关功率特性:小功率频率特性:低频极性:NPN型结构:点接触型材料:硅(Si)封装形式:贴片型封装材料:树脂封装截止频率fT:300(MHz) 集电极允许电流ICM:20(A) 集电极耗散功率PCM:35(W) 营销方式:现货产品性质:热销 Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:12A; On-Resistance, Rds(on):10.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V晶体管极性:NPN电压, Vceo:40V截止频率 ft, 典型值:300MHz功耗, Pd:350mW集电极直流电流:200mA直流电流增益 hFE:300封装类型:SOT-23针脚数:3SVHC(高度关注物质):Cobalt dichloride (18-Jun-2010)SMD标号:1A功耗:350mW器件标记:BT3904噪声因子(NF), :5dB封装类型:SOT-23总功率, Ptot:350mW晶体管数:1晶体管类型:通用小信号连续电流, Ic:200mA最小增益带宽 ft:300MHz电压, Vcbo:60V电流, Ic hFE:10mA电流, Ic :200mA直流电流增益 hfe, 最小值:100表面安装器件:表面安装饱和电压, Vce sat :0.2VSVHC(高度关注物质)(附加):Bis (2-ethyl(hexyl)phthalate) (DEHP
品牌:NXP/恩智浦型号:BC817应用范围:开关极性:NPN型结构:点接触型材料:硅(Si)封装形式:贴片型封装材料:陶瓷封装截止频率fT:100(MHz) 集电极允许电流ICM:30(A) 集电极耗散功率PCM:0.225(W) 营销方式:库存产品性质:热销• Maximum TemperaturesStorage Temperature .......................................................................................... -55 to +150 °CJunction Temperature.................................................................................................... +150 °C• Maximum Power DissipationTotal Power Dissipation (Ta=25°C) ............................................................................... 225 mW• Maximum Voltages and Currents (Ta=25°C)VCES Collector to Base Voltage ......................................................................................... 50 VVCEO Collector to Emitter Voltage...................................................................................... 45 VVEBO Emitter to Base Voltage......