场效应管NTP75N03RG-N沟道75A25V
| 价 格： | 4.00 |
| 品牌：0N/安森美 | 型号：NTP75N03RG | 种类：绝缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 开启电压：25（V） |
| 夹断电压：+-20（V） |
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MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 25 Vdc
Gate−to−Source Voltage − Continuous VGS ±20 Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current
− Continuous @ TC = 25°C
− Single Pulse (tp = 10 s)
R JC
PD
ID
IDM
1.68
74.4
75
225
°C/W
W
AA
Thermal Resistance − Junction−to−Ambient
(Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
R JA
PD
ID
60
2.08
12.6
°C/W
WA
Thermal Resistance − Junction−to−Ambient
(Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
R JA
PD
ID
100
1.25
9.7
°C/W
WA
Operating and Storage Temperature Range TJ, Tstg −55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk,
L = 1 mH, RG = 25 )
EAS 71.7 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8, from Case for 10 Seconds
TL 260 °C
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功率晶体管MJ2955
信息内容：品牌：SKS型号：MJ2955应用范围：功率功率特性：中功率频率特性：高频极性：PNP型结构：点接触型材料：硅(Si)封装形式：直插型封装材料：金属封装截止频率fT：3（MHz） 集电极允许电流ICM：15（A） 集电极耗散功率PCM：115（W） 营销方式：现货产品性质：热销 进口现货,北京供应!~Symbol Parameter Value UnitNPN 2N3055PNP MJ2955VCBO Collector-Base Voltage (IE = 0) 100 VVCER Collector-Emitter Voltage (RBE £ 100W) 70 VVCEO Collector-Emitter Voltage (IB = 0) 60 VVEBO Emitter-Base Voltage (IC = 0) 7 VIC Collector Current 15 AIB Base Current 7 APtot Total Dissipation at Tc £ 25 oC 115 WTstg Storage Temperature -65 to 200 oCTj Max. Operating Junction Temperature 200 oC
