品牌/商标 | SI2305DS-T1-E3 | 型号/规格 | SI2305DS-T1-E3 |
种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
导电方式 | 耗尽型 | 用途 | L/功率放大 |
封装外形 | SMD(SO)/表面封装 | 材料 | IGBT绝缘栅比极 |
开启电压 | 1(V) | 夹断电压 | 1(V) |
跨导 | 1(μS) | 极间电容 | 1(pF) |
低频噪声系数 | 1(dB) | 漏极电流 | 1(mA) |
耗散功率 | 1(mW) |
品牌/商标 ON安森美 型号/规格 NCV1117ST33T3G 应用范围 功率 功率特性 大功率 频率特性 高频 极性 NPN型 结构 点接触型 材料 硅(Si) 封装形式 贴片型 封装材料 树脂封装 NCV1117 1A电流,固定/可调电压输出低压差稳压器NCP1117DT12RKGNCV1117DT15RKGNCV1117DT18RKGNCV1117DT20RKGNCV1117DT25RKGNCV1117DT285RKGNCV1117DT33RKGNCV1117DT50RKGNCV1117DTARKGNCV1117DTAT5GNCV1117ST12T3GNCV1117ST15T3GNCV1117ST20T3GNCV1117ST25T3GNCV1117ST33T3GNCV1117ST50T3GNCP1117STAT3G产品特征1.输出电流可达1.0A2. 1.2 V电压压,温度在800毫安3.固定输出电压1.5V,1.8V,2.0V,2.5V,2.85V,3.3 V5.0 V和12V4.可调输出电压型号选择5.没有固定电压输出设备负载要求6.参考/输出电压校准到± 1.0%7.电流限制...