供应S1133光电二极管
| 价 格： | 面议 | |
| 型号/规格： | S1133 | |
| 品牌/商标： | HAMAMATSU |
S1133
| Package | Ceramic |
| Package Feature | with filter |
| Peak Wavelength | 560 nm |
| Active Area | 2.8 x 2.4 mm |
| Spectral Response Range | 320 to730 nm |
| Photo Sensitivity at peak | 0.3 A/W |
| Dark Current Max. | 0.01 nA |
| Rise Time | 2.5 us |
| Terminal Capacitance | 700 pF |
| Shunt Resistance | 100 Gohm |
| Operating Temperature | -10 to+60 deg. C |
| Storage Temperature | -20 to+70 deg. C |
| Note | |
| Measurement Condition | Typ. Ta=25 deg. C, unless otherwise noted |
S1133-01
| Package | Ceramic |
| Active Area | 2.8 x 2.4 mm |
| Spectral Response Range | 320 to1100 nm |
| Peak Wavelength | 960 nm |
| Photo Sensitivity at peak | 0.58 A/W |
| Dark Current Max. | 0.01 nA |
| Rise Time | 2.5 us |
| Terminal Capacitance | 700 pF |
| Shunt Resistance | 100 Gohm |
| Type | |
| Operating Temperature | -10 to+60 deg. C |
| Storage Temperature | -20 to+70 deg. C |
| Note | |
| Measurement Condition | Typ. Ta=25 deg. C, unless otherwise noted |
S1133-14
| Package | Ceramic |
| Active Area | 2.8 x 2.4 mm |
| Spectral Response Range | 320 to1000 nm |
| Peak Wavelength | 720 nm |
| Photo Sensitivity at peak | 0.4 A/W |
| Dark Current Max. | 0.02 nA |
| Rise Time | 0.5 us |
| Terminal Capacitance | 200 pF |
| Shunt Resistance | 50 Gohm |
| Type | |
| Operating Temperature | -10 to+60 deg. C |
| Storage Temperature | -20 to+70 deg. C |
| Note | |
| Measurement Condition | Typ. Ta=25 deg. C, unless otherwise noted |
- 所属城市：江苏 南京
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- 联系人： 殷先生 陆小姐
- 电话：025-52158881/66031668
- 传真：025-52158881
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供应S1087-01光电二极管
信息内容：Package Ceramic Active Area 1.3 x 1.3 mm Spectral Response Range 320 to1100 nm Peak Wavelength 960 nm Photo Sensitivity at peak 0.58 A/W Dark Current Max. 0.01 nA Rise Time 0.5 us Terminal Capacitance 200 pF Shunt Resistance 250 Gohm Type Operating Temperature -10 to+60 deg. C Storage Temperature ...
供应S1087光电二极管
信息内容：Package Ceramic Package Feature with filter Peak Wavelength 560 nm Active Area 1.3 x 1.3 mm Spectral Response Range 320 to730 nm Photo Sensitivity at peak 0.3 A/W Dark Current Max. 0.01 nA Rise Time 0.5 us Terminal Capacitance 200 pF Shunt Resistance 250 Gohm Operating Temperature -10 to+60 deg. C ...
