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供应TI 的高速14位模数转换器集成电路ADS62P48IRGCT

价 格: 980.00
型号/规格:ADS62P48IRGCT /VQFN(RGC)/64
品牌/商标:TI(德州仪器)

TI > 半导体 > 数据转换器 > 模数转换器 > 高速 ADC (>10MSPS) >集成电路ADS62P48IRGCT 具有 DDR LVDS 和并行 CMOS 输出的双通道 14 位、210MSPS ADC Dual Channel 14-/12-Bit, 250/210 MSPS ADC with DDR LVDS & Parallel CMOS Outputs 说明 The ADS62Px9/x8 is a family of dual channel 14-bit and 12-bit A/D converters with sampling rates up to 250 MSPS. It combines high dynamic performance and low power consumption in a compact 64 QFN package. This makes it well-suited for multi-carrier, wide band-width communications applications. The ADS62Px9/x8 has gain options that can be used to improve SFDR performance at lower full-scale input ranges. It includes a dc offset correction loop that can be used to cancel the ADC offset. Both DDR LVDS (Double Data Rate) and parallel CMOS digital output interfaces are available. It includes internal references while the traditional reference pins and associated decoupling capacitors have been eliminated. View full Description in Datasheet 特性 Maximum Sample Rate: 250 MSPS 14-Bit Resolution – ADS62P49/ADS62P48 12-Bit Resolution – ADS62P29/ADS62P28 Total Power: 1.25 W at 250 MSPS Double Data Rate (DDR) LVDS and Parallel CMOS Output Options Programmable Gain up to 6dB for SNR/SFDR Trade-Off DC Offset Correction 90dB Cross-Talk Supports Input Clock Amplitude Down to 400 mVPP Differential Internal and External Reference Support 64-QFN Package (9 mm × 9 mm) 用途无线通讯基础设施 测试和测量仪器 软件定义无线电 线性功率放大器 802.16d/e 高清晰度视频 医疗成像

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信息内容:

TI 主页 > 半导体 > 电源管理 > 线性稳压器 > 单通道 LDO > 单输出 LDO、1.0A、固定电压 (3.3V)、低噪声、高 PSRR Ultralow-Noise, High PSRR, Fast, RF, 1A, Low-Dropout Linear Regulators 说明 The TPS796xx family of low-dropout (LDO) low-power linear voltage regulators features high power supply rejection ratio (PSRR), ultralow-noise, fast start-up, and excellent line and load transient responses in small outline, 3 × 3 SON, SOT223-6, and DDPAK-5 packages. Each device in the family is stable with a small 1μ ceramic capacitor on the output. The family uses an advanced, proprietary BiCMOS fabrication process to yield extremely low dropout voltages (for example, 250mV at 1A). Each device achieves fast start-up times (approximately 50μs with a 0.001μF bypass capacitor) while consuming very low quiescent current (265 μA typical). Moreover, when the device is placed in standby mode, the supply current is reduced to less than 1μA. View full Descriptio...

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