三菱高频分立MOSFET管 RD60HUF1
| 价 格： | 面议 | |
| 型号/规格： | RD60HUF1 | |
| 品牌/商标： | MITSUBISHI（三菱） | |
| 封装形式： | Ceramic | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | Ceramic | |
| 包装方式： | 托盘 | |
| 功率特征： | 大功率 |
描述：RD60HUF1是一个专门MOS FET型晶体管专为UHF高功率放大器的应用
特性：高功率高增益：Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz高效率：55%typ.on UHF 频带 应用：对于输出的高功率放大器阶段UHF频带移动无线sets DESCRIPTIONRD60HUF1 is a MOS FET type transistor specifically
designed for UHF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz
High Efficiency: 55%typ.on UHF Band
APPLICATION
For output stage of high power amplifiers in UHF
Band mobile radio sets
深圳浩时健电子有限公司是国内三菱射频电子元器件供应商，三菱射频产品广泛应用用于移动通信基站、直放站、卫星通信、有线电视、雷达、无线本地环等领域。积极向国内生产和科研单位推荐新产品：日本三菱公司生产的系列射频功率放大模块、系列射频场效应三极管。多年以来已为国内众多的生产厂家、科研院所、大专院校、国家重要单位维修部门的生产、维修、研制开发新品、教学实验等提供了准确、快捷、方便的配套供货服务。在经营运作上,我公司批发、零售兼营，可向用户长期保证货源，并保证供货品种的技术指标满足相关的国际检测标准。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱（MITSUBISHI）：（射频功率放大模块）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司长期经营日本MITSUBISHI三菱全系列射频功率放大模块，保证全新原装，现货，批号无铅环保，假一罚十。深圳、香港公司备有大量现货库存，可提供样品，现特价热卖中。
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 李小姐
- 电话：0755-83996702/82861853/83017431
- 传真：0755-83017431
- 手机：13760397503
- QQ ：
三菱高频分立MOSFET管 RD30HVF1
信息内容：描述：RD30HUF1是一个专门MOS FET型晶体管专为UHF RF功率放大器应用 特征：高功率增益：Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz高效率：55%typ 应用：对于输出的高功率放大器阶段UHF频带移动无线sets ROHS柔性：RD30HUF1-101是RoHS兼容产品.RoHS遵守指示后，由信“G”该地段标志 DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ. APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets. RoHS COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNITVDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25°C 75 W Pin Input power Zg=Zl=50Ω 2.5 W ID Drain current - 7 A T...
三菱高频分立MOSFET管 RD15HVF1-101
信息内容：描述：RD15HVF1是一个专门MOS FET型晶体管专为高功率放大器应用VHF/UHF-系统蒸发散 特性：高功率高增益：Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz 高效率：60%typ.上VHF 频带 高效率：55%typ.上UHF 频带 应用：对于输出的高功率放大器阶段VHF/UHF频带移动无线sets ROHS柔性：RD15HVF1-101是RoHS兼容产品RoHS遵守指示后，由信“G”该地段的标志该产品包括高熔融高温型焊料中的铅.如何以往，它适用于RoHS方向以下情况除外.1.Lead高熔融焊锡（i.e.tin无铅焊料合金中含有较多的than85%.） DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions. FEATURES High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD15HVF1-101 is a RoHS compli...
