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FQPF10N60CF FAIRCHILD场效应管 仙童MOS管

价 格: 0.10
型号/规格:FQP10N60C
品牌/商标:FAIRCHILD(飞兆)
封装形式:TO-126
环保类别:普通型
安装方式:直插式
包装方式:管装
功率特征:

FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Features
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switched mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge topology.

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