品牌/商标 | UTC(台湾友顺) | 型号/规格 | F6406 |
封装 | SOP-8 | 批号 | 11年 |
类型 | 驱动IC |
品牌/商标 NCE(新洁能) 型号/规格 NCE3010S 种类 绝缘栅(MOSFET) 沟道类型 N沟道 导电方式 增强型 封装外形 SMD(SO)/表面封装 材料 N-FET硅N沟道 漏极电流 10000(mA) 1,完美替代仙童、IR、AOS同参数产品,超低导通阻抗。2,常备大量现货,特价热销,可立即发货。3,可免费索样,支持支付宝交易,并承担产品质量因起的损失!DESCRIPTIONThe NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES● VDS =30V,ID =10ARDS(ON) < 13.5mΩ @ VGS=10VRDS(ON) < 20mΩ @ VGS=4.5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and currentApplication●Power switching application●Hard Sw...
品牌/商标 UTC(台湾友顺) 型号/规格 7N60L 种类 绝缘栅(MOSFET) 沟道类型 N沟道 导电方式 耗尽型 用途 S/开关 材料 N-FET硅N沟道 1,贴片TO-263封装,更适合LED日光灯提高效率之使用。 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTIONThe UTC 7N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in switching power supplies and adaptors. FEATURES* RDS(ON) = 1.0Ω @VGS = 10 V (7N60/7N60-R)RDS(ON) = 1.2Ω @VGS = 10 V (7N60-F/7N60-M/7N60-Q)* Ultra Low Gate Charge (Typical 29 nC )* Low Reverse Transfer Capacitance ( CRSS = ...