品牌/商标 | UTC | 型号/规格 | 4N60L |
种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
导电方式 | 增强型 | 用途 | MOS-INM/独立组件 |
材料 | GE-N-FET锗N沟道 | 开启电压 | 600(V) |
4 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
品牌/商标 台湾Sipu 型号/规格 FDN335N/SP335N 种类 绝缘栅(MOSFET) 沟道类型 N沟道 导电方式 增强型 用途 MOS-ARR/陈列组件 封装外形 SMD(SO)/表面封装 材料 GaAS-FET砷化镓 General DescriptionThis N-Channel 2.5V specified MOSFET is producedusing Fairchild Semiconductor's advanced PowerTrenchprocess that has been especially tailored to minimize theon-state resistance and yet maintain low gate charge forsuperior switching performance.Applications• DC/DC converter• Load switchFeatures• 1.7 A, 20 V. RDS(ON) = 0.07 W @ VGS = 4.5 V RDS(ON) = 0.100 W @ VGS = 2.5 V.• Low gate charge (3.5nC typical).• High performance trench technology for extremely low RDS(ON).• High power and current handling c...
品牌/商标 先科 型号/规格 LL4148 产品类型 开关管 结构 点接触型 材料 砷(As) 封装形式 贴片型 封装材料 玻璃封装 正向直流电流IF 0.15(A) 反向电压 75(V)