品牌/商标 | UTC(台湾友顺) | 型号/规格 | 2N60L-B |
种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
导电方式 | 耗尽型 | 漏极电流 | 2000(mA) |
耗散功率 | 44000(mW) |
1, 现货供应。TO-252小贴片封装。2500PCS/盘。
2,UTC(台湾友顺)品牌MOS管。
2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =5Ω@VGS= 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
品牌/商标 UTC(台湾友顺) 型号/规格 2N70 种类 绝缘栅(MOSFET) 沟道类型 N沟道 导电方式 耗尽型 封装外形 SMD(SO)/表面封装 材料 N-FET硅N沟道 极间电容 5.0(pF) 漏极电流 2000(mA) 耗散功率 44000(mW) 1, TO-252小贴片封装。2500PCS/盘。 2,UTC(台湾友顺)品牌MOS管。 3,0-4个工作日发货。 2 Amps, 700 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 2N70 is a high voltage MOSFET designed to havebetter characteristics, such as fast switching time, low gate charge,low on-state resistance and high rugged avalanche characteristics.This power MOSFET is usually used at high speed switchingapplications in power supplies, PWM motor controls, high efficientDC to ...
品牌/商标 UTC(台湾友顺) 型号/规格 2N60L 种类 绝缘栅(MOSFET) 沟道类型 N沟道 导电方式 增强型 封装外形 SMD(SO)/表面封装 材料 N-FET硅N沟道 极间电容 5(pF) 漏极电流 2000(mA) 耗散功率 44000(mW)