超低特价供50A/60V场效应管50N06
| 价 格： | 0.10 | |
| 型号/规格： | 50N06 | |
| 品牌/商标： | UTC(台湾友顺） | |
| 封装形式： | TO252 | |
| 环保类别： | 普通型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 卷带编带包装 | |
| 功率特征： | |
1，UTC（台湾友顺）品牌高品质低压MOS管。
2，现货供应！全国支持支付宝，珠三角支持快递代收款。
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
FEATURES
* RDS(ON) =23mΩ@VGS= 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 于晶
- 电话：0755-29743120
- 传真：0755-29743152-808
- 手机：13802706767
- QQ ：
MOS管 30V小功率场效应管 UT3418
信息内容：1，以下为参考价。 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORDESCRIPTIONThe UT3418 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch or inPWM applications.FEATURES* RDS(ON) < 60mΩ @VGS = 10 V* RDS(ON) < 70mΩ @VGS = 4.5 V* RDS(ON) < 155mΩ @VGS = 2.5 V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified
台湾友顺UTC一级代理供应9A/900V之MOS管 9N90
信息内容：9A, 900V N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 9N90 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device is suitablefor use as a load switch or in PWM applications.FEATURES* RDS(ON) = 1.4Ω @VGS = 10 V* Ultra Low Gate Charge ( Typical 45 nC )* Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF )* Fast Switching Capability* Avalanche Energy Specified* Improved dv/dt Capability, High Ruggedness
