产品类型 | 瞬变抑制二极管 | 品牌/商标 | Vishay威世 |
型号/规格 | SMBJ48CA | 结构 | 点接触型 |
材料 | 硅(Si) | 封装形式 | 贴片型 |
封装材料 | 塑料封装 | 功率特性 | 小功率 |
频率特性 | 低频 |
¨ Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
¨ For surface mounted applications in order to optimize
board space
¨ Low profile package
¨ Built-in strain relief
¨ Glass passivated junction
¨ Low incremental surge resistance
¨ 600W peak pulse power capability with a 10/1000ms
waveform, repetition rate (duty cycle): 0.01%
¨ Excellent clamping capability
¨ Fast response time: typically less than 1.0ps from 0 volts
to V(BR) for unidirectional and 5.0ns for bidirectional types
¨ For devices with V(BR)³10V, ID are typically less
than 1.0mA
¨ High temperature soldering guaranteed:
250°C/10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO214AA / DO215AA molded plastic body
over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: For unidirectional types the color band denotes the
cathode, which is postitive with respect to the anode under
normal TVS operation
Mounting Position: Any
Weight: 0.003 ounces, 0.093 gram
产品类型 稳压管 品牌/商标 Diodes 型号/规格 BZX84C2V4 结构 点接触型 封装形式 贴片式 正向直流电流IF 0.225(mA) 2N7002KMMBTA55MMBTA28MMBT6427DZ23C2V7BAT54AZ23C5V6MMBT5551SM05TCDLP05LCBAV99W-7-FBSS138-7-FBZX84C8V2BAS116-7-FMMBD4448H-7-FMMBTA06MMBZ15VDLMMBTA14ESDA5V3ESDA6V1MSCT05CBZX84B4V7LT1,BZX84C2V4LT1 SeriesZener Voltage Regulators225 mW SOT−23 Surface MountThis series of Zener diodes is offered in the convenient, surfacemount plastic SOT−23 package. These devices are designed to providevoltage regulation with minimum space requirement. They are wellsuited for applications such as cellular phones, hand held portables,and high density PC boards.Features• 225 mW Rating on FR−4 or FR−5 Board• Zener Breakdown Voltage Range − 2.4 V to 75 V•...
品牌/商标 IR美国国际整流器 型号/规格 IRLML2502TR 应用范围 功率 极性 NPN型 集电极耗散功率PCM 1.25(W) 结构 点接触型 封装形式 贴片型 封装材料 塑料封装 These N-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremelylow on-resistance per silicon area. This benefit, combinedwith the fast switching speed and ruggedized device designthat HEXFET? power MOSFETs are well known for, providesthe designer with an extremely efficient and reliable devicefor use in battery and load management.A thermally enhanced large pad leadframe has beenincorporated into the standard SOT-23 package to producea HEXFET Power MOSFET with the industry's smallestfootprint. This package, dubbed the...