品牌/商标 | AOS | 型号/规格 | AO8801A |
种类 | 结型(JFET) | 沟道类型 | P沟道 |
导电方式 | 增强型 | 用途 | A/宽频带放大 |
封装外形 | SMD(SO)/表面封装 | 材料 | P-FET硅P沟道 |
开启电压 | 50(V) | 夹断电压 | 10(V) |
跨导 | 12(μS) | 极间电容 | 1(pF) |
低频噪声系数 | 20(dB) | 漏极电流 | 10(mA) |
耗散功率 | 2(mW) |
AO8801A
20V P-Channel MOSFET
General Description
The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Product Summary
ESD Protected
Top View
TSSOP8 Bottom View Top View D1 S1 S1 G1 Pin 1 1 2 3 4 8 7 6 5 D2 S2 S2 G2
ID IDM
PD TJ, TSTG
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol
t 10s Steady-State Steady-State
RJA RJL
Typ 63 101 64
Max 83 130 83
Rev 0: May 2009
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AO8801A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: May 2009
www.aosmd.com
AO8801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 -ID (A)
20 -2V 10
1.0E+01 1.0E+00
RDS(ON) (m) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Rev 0: May 2009
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AO8801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4 -VGS (Volts)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
0.1 Single Pulse 0.01 0.00001
PD Ton T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: May 2009
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AO8801A
Gate Charge Test Circuit W aveform
Vgs Qg -10V
DUT Vgs Ig
R esistive S w itching T est C ircuit W avefo rm s
D io de R ec overy T est C ircuit W aveform s
Rev 0: May 2009
Charge
t on td(on) tr t d(o ff) t off tf
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