特价现货 开关二极管BAS316
| 价 格： | 0.10 |
| 产品类型 | 开关管 | 品牌/商标 | NXP恩智浦 |
| 型号/规格 | BAS316 | 结构 | 平面型 |
| 材料 | 硅(Si) | 封装形式 | SOD-323 |
| 封装材料 | 塑料封装 | 功率特性 | 中功率 |
| 频率特性 | 中频 | 反向电压VR | 100（V） |
| 正向直流电流IF | 250（mA） |
高速开关二极管BAS316
High-speed diode BAS316
FEATURES
•Very small plastic SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage: max. 100 V
•Repetitive peak reverse voltage: max. 100 V
•Repetitive peak forward current: max. 500 mA.
APPLICATIONS
•High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD323) and symbol.Marking code: A6.Cathode side indicated by a bar.handbook, halfpageMAM157ka
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.Ts is the temperature at the soldering point of the cathode tab.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BAS316
−
plastic surface mounted package; 2 leads
SOD323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
100
V
VR
continuous reverse voltage
−
100
V
IF
continuous forward current
Ts = 90 °C; note 1; see Fig.2
−
250
mA
IFRM
repetitive peak forward current
−
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 μs
−
4
A
t = 1 ms
−
1
A
t = 1 s
−
0.5
A
Ptot
total power dissipation
Ts = 90 °C; note 1
−
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
2004 Feb 04 3
NXP Semiconductors Product data sheet
High-speed diode BAS316
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.Soldering point of the cathode tab.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.3
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 50 mA
1
V
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR = 25 V
30
nA
VR = 75 V
1
μA
VR = 25 V; Tj = 150 °C
30
μA
VR = 75 V; Tj = 150 °C
50
μA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns; see Fig.8
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-s)
thermal resistance from junction to soldering point
note
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