FDC645N - MOSFET, N, SUP
| 价 格： | 2.50 |
| 品牌/商标 | 仙童半导体 | 型号/规格 | FDC645N - MOSFET, N, SUPERSOT-6 |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | P沟道 |
| 导电方式 | 增强型 |
Description
- MOSFET, N, SUPERSOT-6
- Transistor Polarity:N
- Max Current Id:5.5A
- Max Voltage Vds:30V
- On State Resistance:0.026ohm
- Rds Measurement Voltage:10V
- Max Voltage Vgs:12V
- Power Dissipation:1.6W
- Operating Temperature Range:-55ºC to +150ºC
- Transistor Case Style:Super-SOT
- No. of Pins:6
- SVHC:Cobalt dichloride
- Case Style:SuperSOT-6
- Cont Current Id:5.5A
- Current Temperature:25°C
- Full Power Rating Temperature:25°C
- Max Voltage Vgs th:2V
- Power Dissipation Pd:1.6W
- Pulse Current Idm:20A
- SMD Marking:FDC645N
- Termination Type:SMD
- Transistor Type:MOSFET
- Typ Voltage Vds:30V
- Typ Voltage Vgs th:1.4V
- Uni / Bi Directional Polarity:N
- Voltage Vds:30V
- Voltage Vgs Rds on Measurement:10V
- SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
- MOSFET, N, SUPERSOT-6
- Transistor Polarity:N
- Max Current Id:5.5A
- Max Voltage Vds:30V
- On State Resistance:0.026ohm
- Rds Measurement Voltage:10V
- Max Voltage Vgs:12V
- Power Dissipation:1.6W
- Operating Temperature Range:-55ºC to +150ºC
- Transistor Case Style:Super-SOT
- No. of Pins:6
- SVHC:Cobalt dichloride
- Case Style:SuperSOT-6
- Cont Current Id:5.5A
- Current Temperature:25°C
- Full Power Rating Temperature:25°C
- Max Voltage Vgs th:2V
- Power Dissipation Pd:1.6W
- Pulse Current Idm:20A
- SMD Marking:FDC645N
- Termination Type:SMD
- Transistor Type:MOSFET
- Typ Voltage Vds:30V
- Typ Voltage Vgs th:1.4V
- Uni / Bi Directional Polarity:N
- Voltage Vds:30V
- Voltage Vgs Rds on Measurement:10V
- SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
- 所属城市：上海 上海市
- [联系时请说明来自维库仪器仪表网]
- 联系人： 侯林
- 电话：21-58217591
- 传真：21-58217591
- 手机：
- QQ ：
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