价 格: | 面议 | |
型号/规格: | FDS6690 | |
品牌/商标: | FAIRCHILD/仙童 | |
封装形式: | SOP-8 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | |
FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
Features
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter FDS6690 Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a) 10 A - Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2
(Note 1c) 1
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
FDS6690 Rev.C
10 A, 30 V. RDS(ON) = 0.0135 W @ VGS = 10 V
RDS(ON) = 0.0200 W @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching .
Low gate charge (Qg typ = 13 nC).
600V N-Channel MOSFETFeatures■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V■ Gate charge (Typical 17nC)■ High ruggedness■ Fast switching■ 100% AvalancheTested■ Improved dv/dt capabilityGeneral DescriptionThis Power MOSFET is produced using Truesemi’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics, such as fast switching time,lowon resistance.low gate charge and especially excellent avalanchecharacteristics. This power MOSFET is usually used at ACadaptors, on the battery charger and SMPS
*一直都有现货,并且特价供应! Si4410DYPbF HEXFET Power MOSFET VDSS = 30V RDS(on) = 0.0135ΩN-Channel MOSFETLow On-ResistanceLow Gate ChargeSurface MountLogic Level DriveLead-FreeParameter Max. UnitsRθJA Maximum Junction-to-Ambient 50 °C/WThermal ResistanceThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low onresistanceand low gate charge inherent to thistechnology make this device ideal for low voltage orbattery driven power conversion applicationsThe SO-8 package with copper leadframe offersenhanced thermal characteristics that allow powerdissipation of greater that 800mW in typical boardmount applications.