价 格: | 面议 | |
型号/规格: | UT5003 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | SOP-8 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | |
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UT5003 can provide excellent RDS (ON) and low gate
charge by using UTC’s advanced trench technology. This device
is suitable for use as a load switch or in PWM applications.
FEATURES
* N-Channel: 30V/7A
RDS(ON) = 27.5mΩ @ VGS =10V
RDS(ON) = 40mΩ @ VGS= 4.5V
* P-Channel: -30V/-5A
RDS(ON) = 45mΩ @ VGS= -10V
RDS(ON) = 80mΩ @ VGS= -4.5V
* Super high dense cell design
* Reliable and rugged
FeaturesType VDSS RDS(on) max IDSTS10N3LH5 30 V 0.021 Ω 10 A ■ RDS(on) * Qg industry benchmark■ Extremely low on-resistance RDS(on)■ Very low switching gate charge■ High avalanche ruggedness■ Low gate drive power lossesApplication■ Switching applicationsDescriptionThis STripFET™V Power MOSFET technology isamong the latest improvements, which have beenespecially tailored to achieve very low on-stateresistance providing also one of the best-in-classFOM.
*一直都有现货,并且特价供应! Si4410DYPbF HEXFET Power MOSFET VDSS = 30V RDS(on) = 0.0135ΩN-Channel MOSFETLow On-ResistanceLow Gate ChargeSurface MountLogic Level DriveLead-FreeParameter Max. UnitsRθJA Maximum Junction-to-Ambient 50 °C/WThermal ResistanceThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low onresistanceand low gate charge inherent to thistechnology make this device ideal for low voltage orbattery driven power conversion applicationsThe SO-8 package with copper leadframe offersenhanced thermal characteristics that allow powerdissipation of greater that 800mW in typical boardmount applications.