现货热卖高品质 (LED电源桥堆）MB6S
| 价 格： | 面议 | |
| 型号/规格： | MB6S | |
| 品牌/商标： | 台湾GD |
主要参数：
Vrrm 600V，If(on glass-e epoxy PCB）大于0.5Amp. on aluminum substrate 大于0.8Amp。
Ifsm=35Amps。
- 所属城市：广东 深圳
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- 电话：0755-29743120
- 传真：0755-29743152-808
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高品质MOS管 UTC 11N40
信息内容：Amplifier / Comparator： Audio Amplifiers、 Operational Amplifier Voltage ComparatorPower Management： Combo IC、DDR Termination Regulators FET Bias Controllers Inverting DC-DC Converter Li-Battery Protection or Charger IC Linear Regulators、PWM Controller Low Dropout Linear Regulators Power Factor Control、White LED Driver Shunt Reference Regulators Step Down Switching Regulators Step-Up DC-DC Converter and Controller Supervisory Circuit、USB Power Switch Voltage Detection and System Reset ICHall ICsDarlington TransistorsDual Chip Transistors： Complex Bipolar Transistors Complex Digital TransistorsAnalog Switches： Analog Multiplexers, Demultiplexer ICs Video Signal SwitchSpecial Application ICs： A-D or D-A Converters Alarm /Sound Generator IC Automotive IC、Motor Controller IC Christmas Lamp Controller Interface and Driver Circuit Leakage Current Detector Melody IC、Miscellaneous Radio and Cassette Recorder Circuit Remote Con...
7A/700V场效应管 MOS管 7N70
信息内容：7 Amps, 700 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 7N70 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) = 1.5Ω @VGS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 18 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
