供应100V,8A,NPN低频大功率三极管D1830
| 价 格： | 面议 | |
| 型号/规格： | 2SD1830 | |
| 品牌/商标： | SANYO | |
| 封装形式： | TO-220F | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 散装 | |
| 功率特性： | | |
| 频率特性： | | |
| 极性： | |
PNP/NPN Epitaxial Planar Silicon Darlington Transistor
2SB1228/2SD1830
Applications
· Suitable for use in control of motor drivers, printer
hammer drivers, relay drivers, and constant-voltage
regulators.
Features
· High DC current gain.
· Large current capacity and wide ASO.
· Low saturation voltage.
· Micaless package facilitating mounting.
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- 所属城市：广东 深圳
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- 联系人： 陈树辉
- 电话：0755-82534577/13076512089
- 传真：0755-82534577
- 手机：13686868407
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供应80V,7A,NPN低频大功率三极管D1907
信息内容：制作材料:Si-NPN 性质:开关管 （S），LO，SAT 封装形式:开关管 （S），LO，SAT 极限工作电压:90V 电流允许值:7A 工作频率:<1MHZ或未知 引脚数:3 可代换的型号:2SD843,2SD2201 耗散功率:40W dzsc/18/4614/18461436.jpg dzsc/18/4614/18461436.jpg 2SB1452/2SD2201： dzsc/18/4614/18461436.jpg
供应FDM47-06KC5 N沟道MOSFET CoolMOS
信息内容：FDM47-06KC5 - CoolMOS Pow er MOSFET with HiPerDyn FRED Buck and Boost Topologies - IXYS Corporation Features• Silicon chip on Direct-Copper-Bondsubstrate- high power dissipation- isolated mounting surface- 2500 V electrical isolation- low drain to tab capacitance (< 40 pF)• Fast CoolMOS™ 1) power MOSFET 4thgeneration- high blocking capability- lowest resistance- avalanche rated for unclampedinductive switching (UIS)- low thermal resistancedue to reduced chip thickness• Enhanced total power density• HiPerDyn™ FRED- consisting of series connected diodes- enhanced dynamic behaviour forhigh frequency operationApplications• Switched mode power supplies(SMPS)• Uninterruptible power supplies (UPS)• Power factor correction (PFC)Advantages• Easy assembly:no screws or isolation foils required• Space savings• High power density• High reliability 特点•硅芯片上直接键合铜技术(Direct Copper Bond，简称DCB)， ...
