价 格: | 1.00 | |
型号/规格: | RD01MUS1-T113 | |
品牌/商标: | 三菱 | |
封装形式: | SOT-89 | |
环保类别: | 无铅环保型 | |
安装方式: | 直插式 | |
包装方式: | 卷带编带包装 | |
功率特性: | | |
频率特性: | | |
极性: | |
DE
RD01MUS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
FEATURES:
High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
High Efficiency: 65%typ.
APPLICATION:
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
RQA0004LXAQS Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) • Compact package capable of surface mounting 北京京瑞馨科技--供应全新原装射频模块、射频管!假一罚十!!! 全新原装供应: 三菱(MITSUBISHI):(HF/VHF/UHF/900MHz(分立MOSFET) RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、 RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、 RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、 RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD02MUS2B、RD01MUS1、 RD01MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD系列 三菱(MITSUBISHI): RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、 RA45H4452M、RA45H4047M、RA...
RQA0002DNS Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz) • Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm) 北京京瑞馨科技--供应全新原装射频模块、射频管!假一罚十!!! 全新原装供应: 三菱(MITSUBISHI):(HF/VHF/UHF/900MHz(分立MOSFET) RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、 RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、 RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、 RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD02MUS2B、RD01MUS1、 RD01MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD系列 三菱(MITSUBISHI): RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、 RA45H4452M、RA45H4047M、...