供应ST代理:原装进口MOS管STP80NF70
| 价 格： | 1.70 | |
| 型号/规格： | STP80NF70 | |
| 品牌/商标： | ST（意法半导体） | |
| 环保类别： | 无铅环保型 |
ST代理:原装进口MOS管STP80NF70,原厂,品质保障,可开17%增票
STP80NF75L
STB80NF75L STB80NF75L-1
N-CHANNEL 75V - 0.008 W - 80A TO-220/D2PAK/I2PAK
STripFET™ II POWER MOSFET
n TYPICAL RDS(on) = 0.008 W
n EXCEPTIONAL dv/dt CAPABILITY
n 100% AVALANCHE TESTED
n LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance,
rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
n HIGH CURRENT, HIGH SWITCHING SPEED
n MOTOR CONTROL, AUDIO AMPLIFIERS
n DC-DC & DC-AC CONVERTERS
n SOLENOID AND RELAY DRIVERS
TYPE VDSS RDS(on) ID
STP80NF75L
STB80NF75L
STB80NF75L-1
75 V
75 V
75 V
<0.01 W
<0.01 W
<0.01 W
80 A
80 A
80 A
1
2
3
TO-220
1
3
D2PAK
TO-263
I2PAK
TO-262
1 2 3
ABSOLUTE MAXIMUM RATINGS
(·)Current Limited by Package
(··) Pulse width limited by safe operating area.
(1) ISD £80A, di/dt £960A/μs, VDD £ V(BR)DSS, Tj £ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD= 40V
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 75 V
VDGR Drain-gate Voltage (RGS = 20 kW) 75 V
VGS Gate- source Voltage ± 16 V
ID(·) Drain Current (continuos) at TC = 25°C 80 A
ID Drain Current (continuos) at TC = 100°C 80 A
IDM(··) Drain Current (pulsed) 320 A
Ptot Total Dissipation at TC = 25°C 300 W
Derating Factor 2 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 12 V/ns
EAS (2) Single Pulse Avalanche Energy 930 mJ
Tstg Storage Temperature
-55 to 175 °C
Tj Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STB80NF75L/-1/ STP80NF75L
2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
ON (*)
DYNAMIC
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
°C/W
°C/W
°C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 μA, VGS = 0
75 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
μA
μA
IGSS Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 μA 1 1.6 2.5 V
RDS(on) Static Drain-source On
Resistance
VGS = 5 V ID = 40 A
VGS = 10 V ID = 40 A
0.01
0.008
0.013
0.010
WW
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (*) Forward Transconductance VDS = 25 V ID = 40 A 50 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0 5000
835
360
pF
pF
pF
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