昆山东森微电子有限公司:致力于为客户提供原装进口的集成电路 二极管 三极管 MOS管 可控硅 光耦,二十年的品质 和原厂良好的合作关系,打造电子元件代理商品牌!因本公司主要以批发为主,利润微薄,所有元件价格均以当天报价为准,欢迎电话询价和索取元件规格书!
UNISONIC TECHNOLOGIES CO., LTD
UF460 Power MOSFET
21 Amps, 500 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UF460 uses advanced UTC technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch, in PWM
applications, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
FEATURES
* RDS(ON) = 310mΩ@VGS = 10V, ID =21A
* Ultra low gate charge (max. 190nC )
* Low reverse transfer capacitance ( CRSS = typical 250pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
1.Gate
3.Source
2.Drain
Lead-free: UF460L
Halogen-free: UF460G
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen Free
Package
1 2 3
Packing
UF460-T47-T UF460L-T3P-T UF460G-T3P-T TO-3P G D S Tube
UF460-T47-T UF460L-T47-T UF460G-T47-T TO-247 G D S Tube
ST代理:原装进口MOS管STP80NF70,原厂,品质保障,可开17%增票 STP80NF75LSTB80NF75L STB80NF75L-1N-CHANNEL 75V - 0.008 W - 80A TO-220/D2PAK/I2PAKSTripFET™ II POWER MOSFETn TYPICAL RDS(on) = 0.008 Wn EXCEPTIONAL dv/dt CAPABILITYn 100% AVALANCHE TESTEDn LOW THRESHOLD DRIVEDESCRIPTIONThis Power MOSFET is the latest development ofSTMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistorshows extremely high packing density for low onresistance,rugged avalanche characteristics andless critical alignment steps therefore a remarkablemanufacturing reproducibility.APPLICATIONSn HIGH CURRENT, HIGH SWITCHING SPEEDn MOTOR CONTROL, AUDIO AMPLIFIERSn DC-DC & DC-AC CONVERTERSn SOLENOID AND RELAY DRIVERSTYPE VDSS RDS(on) IDSTP80NF75LSTB80NF75LSTB80NF75L-175 V75 V75 V<0.01 W<0.01 W<0.01 W80 A80 A80 A123TO-22013D2PAKTO-263I2PAKTO-2621 2 3ABSOLUTE MAXIMUM RATINGS(·)Current Limited by Package(··) Pulse width limited by safe operating area.(1) I...
特价热销长电CJ MOS管75N80 代用ST 75NF75,长电授权代理,假一赔十! CJP75N80 N-Channel Power MOSFETGeneral DescriptionThe CJ75N80 uses advanced trench technology and design toProvide excellent RDS(on) with low gate charge. Good stability anduniformity with high EAS .This device is suitable for use in PWM,load switching and general purpose applications.FEATUREz Advanced trench process technologyz Special designed for convertors and power controlsz High density cell design for ultra low RDS(on)z Fully characterized avalanche voltage and currentz Fast switchingz Avalanche energy 100% testAPPLICATIONSz Power switching applicationz Hard switched and high frequency circuitsz Uninterruptible power supplyMaximum ratings (Ta=25℃ unless otherwise noted)Parameter Symbol Value UnitDrain-Source voltage VDSS 75Gate-Source Voltage VGS ±25VDrain Current(DC) at TC=25℃ ID(DC) 80Drain Current-Continuous @Current-Pulsed(note1) IDM(pulse) 320APower Dissipation 2 WMaximum Power Dissipation 160 WSin...