Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type | VCE | IC | VCE(sat) | Tj | Package | OrderingCode |
SKW30N60HS | 600V | 30A | 2.5V | 150°C | TO-247AC | Q67040-S4244 |
供应600V.2A N-CH MOS管1HNC60 STD1HNC60N-CHANNEL 600V - 4W - 2A - IPAK/DPAKPowerMesh™II MOSFET n TYPICAL RDS(on) = 4 Wn EXTREMELY HIGH dv/dt CAPABILITYn 100% AVALANCHE TESTEDn NEW HIGH VOLTAGE BENCHMARKn GATE CHARGE MINIMIZEDDESCRIPTIONThe PowerMESH™II is the evolution of the firstgeneration of MESH OVERLAY™. The layout refinementsintroduced greatly improve the Ron*areafigure of merit while keeping the device at the leadingedge for what concerns swithing speed, gatecharge and ruggedness.APPLICATIONSn HIGH CURRENT, HIGH SPEED SWITCHINGn SWITH MODE POWER SUPPLIES (SMPS)n DC-AC CONVERTERS FOR WELDINGEQUIPMENT AND UNINTERRUPTIBLEPOWER SUPPLIES AND MOTOR DRIVER
P-CHANNEL 60V - 0.18 W - 10A IPAK/DPAKSTripFET™ II POWER MOSFET n TYPICAL RDS(on) = 0.18 Wn EXCEPTIONAL dv/dt CAPABILITYn 100% AVALANCHE TESTEDn LOW GATE CHARGEn APPLICATION ORIENTEDCHARACTERIZATIONn THROUGH-HOLE IPAK (TO-251) POWERPACKAGE IN TUBE (SUFFIX “-1")n SURFACE-MOUNTING DPAK (TO-252)POWER PACKAGE IN TAPE & REEL(SUFFIX “T4")