1. OVERVIEW
1.1 Description
The HMS87C1X0XA is an advanced CMOS 8-bit microcontroller with 4K/2K bytes of EPROM. The Hynix
HMS87C1X0XA is a powerful microcontroller which provide a highly flexible and cost effective solution to many small
applications such as controller for battery charger. The HMS87C1X0XA provides the following standard features: 4K/2K
bytes of EPROM, 128bytes of RAM, 8-bit timer/counter, 8-bit A/D converter, 10-bit high speed PWM output, programmable
buzzer driving port, power-on reset circuit, on-chip oscillator and clock circuitry. In addition, the HMS87C1X0XA supports
power saving modes to reduce power consumption.
This document is only explained for the base of HMS87C1304A, the other’s eliminated functions are same as below.
dzsc/18/2293/18229394.jpg
1.2 Features
• 4K/2K Bytes On-chip Program Memory
• 128 Bytes of On-chip Data RAM
(Included stack memory)
• Instruction Cycle Time:
- 250nS at 8MHz
• Programmable I/O pins
(LED direct driving can be source and sink)
- HMS87C1304A/1302A : 19
- HMS87C1204A/1202A : 15
- HMS87C1104A/1102A : 11
• 2.0V to 5.5V Wide Operating Range
• 8-bit A/D Converter
- 8 channels
• One 8-bit Basic Interval Timer
• Two 8-bit Timer / Counters
• One 10-bit High Speed PWM Outputs
• Watchdog timer
• Seven Interrupt sources
- External input: 2 ( 1 for HMS87C1104/2A )
- A/D Conversion: 1
- Timer: 4
• One Programmable Buzzer Driving port
( except HMS87C1104/2A )
- 500Hz ~ 130kHz
dzsc/18/2293/18229394.jpg
dzsc/18/2293/18229394.jpg
电压 - 在 If 时为正向 (Vf)() : 800mV @ 100mA 电压 - (Vr)() : 30V 电流 - 平均整流 (Io) : 200mA 电流 - 在 Vr 时反向漏电 : 2µA @ 25V 二极管型 : 肖特基 速度 : 小信号 =< 200mA (Io),任意速度 反向恢复时间(trr) : 5ns 电容@ Vr, F : 10pF @ 1V, 1MHz 安装类型 : 表面贴装 封装/外壳 : TO-236-3, SC-59, SOT-23-3 包装 : 带卷 (TR)
供应300V,600W瞬态抑制TVS二极管P6KE300CA Features• Glass passivated junction.• 600W Peak Pulse Power capability at1.0 ms.• Excellent clamping capability.• Low incremental surge resiSTance.• Fast response time; typically lessthan 1.0 ps from 0 volts to BV forunidIRectional and 5.0 ns forbidirectional.• Typical IR less than 1.0 μA above 10V.