品牌:IR/VISHAY 型号:IRF3205STRL 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:耗尽型 用途:SW-REG/开关电源 封装外形:CHIP/小型片状 材料:N-FET硅N沟道 开启电压:55(V) 夹断电压:20(V) 低频跨导:1(μS) 极间电容:1(pF) 低频噪声系数:1(dB) 漏极电流:1(mA) 耗散功率:1(mW)
IR全新原装,库存现货.
Parameter | Value |
Package | D2-Pak |
Circuit | Discrete |
VBRDSS (V) | 55 |
VGs Max (V) | 20 |
RDS(on) Max 10V (mOhms) | 8.0 |
ID @ TC = 25C (A) | 110 |
ID @ TC = 100C (A) | 80 |
Qg Typ (nC) | 97.3 |
Qgd Typ (nC) | 36.0 |
Rth(JC) (K/W) | 0.75 |
Power Dissipation @ TC = 25C (W) | 200 |
Part Status | Active |
Environmental Options Available | PbF |
Package Class Can | Surface Mount with Leads |
MOSFET, 55V, 26A, 40 mOhm, 22.7 nC Qg, TO-220ABSpecificationsParameterValuePackage TO-220ABCircuit DiscreteVBRDSS (V) 55VGs Max (V) 20RDS(on) Max 10V (mOhms) 40.0ID @ TC = 25C (A) 26ID @ TC = 100C (A) 18Qg Typ (nC) 22.7Qgd Typ (nC) 9.3Rth(JC) (K/W) 2.7Power Dissipation @ TC = 25C (W) 56Part Status ActiveEnvironmental Options Available PbFPackage Class Can Thru-Hole
MOSFET, 20V, 36A, 16 mOhm, 4.8 nC Qg, Logic Level, TO-220ABSpecificationsParameterValuePackage TO-220ABCircuit DiscreteVBRDSS (V) 20VGs Max (V) 20RDS(on) Max 4.5V (mOhms) 26.0RDS(on) Max 10V (mOhms) 16.0ID @ TC = 25C (A) 36ID @ TC = 100C (A) 25Qg Typ (nC) 4.8Qgd Typ (nC) 1.7Rth(JC) (K/W) 4.3Power Dissipation @ TC = 25C (W) 35Part Status Active & PreferredEnvironmental Options Available PbF and LeadedPackage Class Can Thru-Hole