价 格: | 面议 | |
型号/规格: | 0603 | |
品牌/商标: | ON | |
封装形式: | SOT | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特性: | | |
频率特性: | | |
整流电流: | A | |
反向电压: | V |
供应32V,1A PNP贴片开关三极管BA RN
Medium Power Transistor
(32V, 1A)
2SB1132 / 2SA1515S / 2SB1237
Features
1) Low VCE(sat).
VCE(sat) = 0.2V (Typ.)
(IC / IB = –500mA / –50mA)
2) Compliments 2SD1664 /
2SD1858.
STructure
Epitaxial planar type
PNP silicon transistor
2EZ Series VZ : 3.6 - 200 VoltsPD : 2 WattsFEATURES :* Complete Voltage Range 3.6 to 200 Volts* High peak reverse power dissipation* High reliability* Low leakage currentMECHANICAL DATA* Case : DO-41 Molded plaSTic* Epoxy : UL94V-O rate flame retardant* Lead : Axial lead solderable per MIL-STD-202,method 208 guaranteed* Polarity : Color band denotes cathode end* Mounting position : Any* Weight : 0.339 gram
供应20V,2A N-CH MOS管IFDN327N FDN327NN-Channel 1.8 Vgs Specified powerTrenchÒ MOSFETGeneral DescriptionThis 20V N-Channel MOSFET uses Fairchild’s highvoltage PowerTrench process. It has been optimized forpower management applicatiONs.Applications· Load switch· Battery protection· Power managementFeatures· 2 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 VRDS(ON) = 80 mW @ VGS = 2.5 VRDS(ON) = 120 mW @ VGS = 1.8 V· Low gate charge (4.5 nC typical)· Fast switching speed· High performance trench technology for extremelylow RDS(ON)