产品概述: | 2K 2.5-5.5V I 2 C Serial EEPROM | ||
应用特性: | .Single supply with operation down to 1.8v .Low-power CMOS technology: ---1 mA active current, typical ---1 μA standby current, typical(l-temp) .Organized as 1 block of 256 bytes (1×256×8) .2-wire serial interface bus, l2CTM compatible .Schmitt Trigger inputs for noise suppression .Output slope control to eliminate ground bounce .400 kHz (24LC02B) compatibility .Self-timed write cycle (including auto-erase) .Page write buffer for up to 8 bytes .Hardware write-protect for entire memory .Can be operated as a serial ROM .Factory programming (QTP) available .ESD protection>4,000V .1,000,000 erase/write cycles .Data retention>200 years .8-lead PDIP, SOIC ,TSSOP,DFN and MSOP packages .5-lead SOT-23 package .Pb-free finish available .Available for extended temperature ranges: ---Industrial(I): -40℃ to +85℃ ---Automotive(E): -40℃ to +125 |
产品概述: LOW POWER USE NON-INSULATED TYPE,GLASS PASSIVTION TYPE 应用特性: IT (AV) ......... 0.3A VDRM ......400V/600V IGT .........100µA 应用领域: Leakage protector, timer, gas ignitor
产品概述: 2K 2.5-5.5V I 2 C Serial EEPROM 应用特性: .Single supply with operation down to 1.8v.Low-power CMOS technology:---1 mA active current, typical---1 μA standby current, typical(l-temp).Organized as 1 block of 256 bytes (1×256×8).2-wire serial interface bus, l2CTM compatible.Schmitt Trigger inputs for noise suppression.Output slope control to eliminate ground bounce.400 kHz (24LC02B) compatibility.Self-timed write cycle (including auto-erase).Page write buffer for up to 8 bytes.Hardware write-protect for entire memory.Can be operated as a serial ROM.Factory programming (QTP) available.ESD protection>4,000V.1,000,000 erase/write cycles.Data retention>200 years.8-lead PDIP, SOIC ,TSSOP,DFN and MSOP packages.5-lead SOT-23 package.Pb-free finish available.Available for extended temperature ranges:---Industrial(I): -40℃ to +85℃---Automotive(E): -40℃ to +125