供应长电特价热销CJ MOS管75N80 代用ST 75NF75
| 价 格： | 1.55 | |
| 型号/规格： | 75N80 | |
| 品牌/商标： | 长电 | |
| 环保类别： | 无铅环保型 |
特价热销长电CJ MOS管75N80 代用ST 75NF75，长电授权代理，假一赔十！
CJP75N80 N-Channel Power MOSFET
General Description
The CJ75N80 uses advanced trench technology and design to
Provide excellent RDS(on) with low gate charge. Good stability and
uniformity with high EAS .This device is suitable for use in PWM,
load switching and general purpose applications.
FEATURE
z Advanced trench process technology
z Special designed for convertors and power controls
z High density cell design for ultra low RDS(on)
z Fully characterized avalanche voltage and current
z Fast switching
z Avalanche energy 100% test
APPLICATIONS
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible power supply
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source voltage VDSS 75
Gate-Source Voltage VGS ±25
V
Drain Current(DC) at TC=25℃ ID(DC) 80
Drain Current-Continuous @Current-Pulsed(note1) IDM(pulse) 320
A
Power Dissipation 2 W
Maximum Power Dissipation 160 W
Single Pulsed Avalanche Energy(note2) EAS 580 mJ
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W
Storage Temperature Tj 175
Junction Temperature Tstg -55 ~+175
℃
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. EAS condition: Tj=25℃ , VDD=50V,VG=10V,L=0.3mH,ID=62A
TO-220
1. GATE
2. SOURCE
3. DRAIN
1 2 3
PD (note 4, Tc=25℃)
(note 3, Ta=25℃)
3. This test is performed with no heat sink at Ta=25℃.
4. This test is performed with infinite heat sink at Tc=25℃.
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