LDO稳压电源芯片
| 价 格： | 面议 | |
| 型号/规格： | NXP1117 3.3 | |
| 品牌/商标： | NXP（恩智浦） |
Maximum output current of 1 A
Wide operation range to 20 V input
Output voltage accuracy of1 % or 1.25 %
No minimum load requirements for fixed output voltage versions
Output current limiting
1.2 NX1117C12Z
1.5 NX1117C15Z
1.8 NX1117C18Z
1.9 NX1117C19Z
2.0 NX1117C20Z
2.5 NX1117C25Z
2.85 NX1117C285Z
3.3 NX1117C33Z
5.0 NX1117C50Z
- 所属城市：广东 东莞
- [联系时请说明来自维库仪器仪表网]
- 联系人： 杨晨
- 电话：769-23177534
- 传真：769-23177534
- 手机：13631712682
- QQ ：
大功率IGBT模块
信息内容：* 500V RDS(on)=1.4Ω(max) 3-phase fast-recovery MOSFET inverter including high voltage integrated circuit(HVIC)* 3 divided negative dc-link terminals for inverter current sensing applications* HVIC for gate driving and under-voltage protection* 3/5V CMOS/TTL compatible, active-high interface* Optimized for low electromagnetic interference* Isolation voltage rating of 1500Vrms for 1min.
大功率IGBT模块
信息内容：* 600V-20A 3-phaseIGBT inverter including high voltage integrated circuit(HVIC) and bootstrap diode;* 3 divided negative dc-link terminals for inverter current sensing applications;* HVIC for gate driving and under-voltage protection;* 3/5V CMOS/TTL compatible, active-high interface;* Schmitt-triggered input logic;* Fault signaling: Corresponding to UV(Low-side supply) and SC faults;* Matched propagation delay for all channels;* Very low thermal resistance due to using DBC;* Isolation voltage rating of 2500Vrms for 1min.
