供应VSM500D系列霍尔电压传感器
| 价 格： | 面议 | |
| 型号/规格： | VSM050D,VSM100D,VSM200D,VSM300D,VSM400D,VSM500D,VSM600D,VSM800D | |
| 品牌/商标： | chieful |
| VSM500D系列霍尔电压传感器 |
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应用霍尔效应闭环原理的电压传感器，能在电隔离条件下测量各种信号的电压
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- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈树辉
- 电话：0755-82534577/13076512089
- 传真：0755-82534577
- 手机：13686868407
- QQ ：
供应250V,5A P-CH MOS塑封场效应管J512
信息内容：TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) Chopper Regulator, DC−DC Converter and Motor DriveApplications Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 3.7 S (typ.) Low leakage current : IDSS = −100 μA (max) (VDS = −250 V) Enhancement mode : Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA) dzsc/17/7796/17779681.jpg
供应FLASH内存芯片K9F2808UOC-YCBO
信息内容：16M x 8 Bit NAND Flash Memory ( FLASH内存芯片K9F2808UOC-YCBO) FEATURES• Voltage Supply : 2.7 ~ 3.6 V• Organization - Memory Cell Array -(16M + 512K)bit x 8bit - Data Register - (512 + 16)bit x 8bit• Automatic Program and Erase - Page Program -(512 + 16)Byte - Block Erase : - (16K + 512)Byte• Page Read Operation - Page Size - (512 + 16)Byte - Random Access : 10µs(Max.) - Serial Page Access : 50ns(Min.)• Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)• Command/Address/Data Multiplexed I/O Port• Hardware Data Protection - Program/Erase Lockout During Power Transitions• Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years• Command Register Operation• Unique ID for Copyright Protection• Package- K9F2808U0C-YCB0/YIB048 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- K9F2808U0C-PCB0/PIB048 ...
