商品详细介绍 dzsc/17/6265/17626591.jpg
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供应900V,9A N-CH东芝场效应管2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)2SK3878Switching Regulator Applications• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)• High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Features and benefits■ Very low conduction losses■ Negligible switching losses■ Low forward and reverse recovery times■ High junction temperatureDescriptionThe STTH3R02 uses ST's new 200 V planar Ptdoping technology, and it is specially suited forswitching mode base drive and transistor circuits.Packaged in DO-201AD, DO-15, and SMC, thisdevice is intended for use in low voltage, highfrequency inverters, free wheeling and polarity protection.