供应电源场效应管HAT1026R
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品牌:RENESAS 型号:HAT1026R 种类:结型 沟道类型:P沟道 导电方式:耗尽型
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS –30 V
Gate to source voltage VGSS ±20 V
Drain current ID –7 A
Drain peak current ID (pulse)
Note 1 –56 A
Body-drain diode reverse drain current IDR –7 A
Channel dissipation Pch Note 2 2.5 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
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供应电源场效应管HAT1036R
信息内容：品牌:RENESAS 型号:HAT1036R 种类:结型 沟道类型:P沟道 导电方式:耗尽型Silicon P Channel Power MOS FETHigh Speed Power SwitchingFeatures• Low on-resistance• Capable of 4 V gate drive• Low drive current• High density mountingAbsolute Maximum Ratings(Ta = 25°C)Item Symbol Value UnitDrain to source voltage VDSS –30 VGate to source voltage VGSS ±20 VDrain current ID –7 ADrain peak current ID (pulse)Note 1 –56 ABody-drain diode reverse drain current IDR –7 AChannel dissipation Pch Note 2 2.5 WChannel temperature Tch 150 °CStorage temperature Tstg –55 to +150 °CNotes: 1. PW ≤ 10 μs, duty cycle ≤ 1%2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
供应电源场效应管HAT1055R
信息内容：品牌:RENESAS 型号:HAT1055R 种类:结型 沟道类型:P沟道 导电方式:耗尽型Silicon P Channel Power MOS FETHigh Speed Power SwitchingFeatures• Low on-resistance• Capable of 4 V gate drive• Low drive current• High density mountingAbsolute Maximum Ratings(Ta = 25°C)Item Symbol Value UnitDrain to source voltage VDSS –30 VGate to source voltage VGSS ±20 VDrain current ID –7 ADrain peak current ID (pulse)Note 1 –56 ABody-drain diode reverse drain current IDR –7 AChannel dissipation Pch Note 2 2.5 WChannel temperature Tch 150 °CStorage temperature Tstg –55 to +150 °CNotes: 1. PW ≤ 10 μs, duty cycle ≤ 1%2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
