供应30V,6.6A DUAL N-CH MOS管PHKD13N03
| 价 格： | 面议 | |
| 型号/规格： | PHKD13N03LT | |
| 品牌/商标： | NXP | |
| 封装形式： | SOP-8 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特征： | |
PHKD13N03LT
Dual N-channel TrenchMOS logic level FET
1.1 General description
Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Simple gate drive required due to low
gate charge
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC convertors
Lithium-ion battery applications
Notebook computers
Portable equipment
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈树辉
- 电话：0755-82534577/13076512089
- 传真：0755-82534577
- 手机：13686868407
- QQ ：
供应宽范围输入电压单同步DC/DC转换器RT8110
信息内容：一、简介 RT8110是一个单供电的PWM DC/DC控制器，设计于一个同步阶跃拓扑结构，驱动N沟道场效应管。该IC在一个小8脚封装上集成了控制、输出调节、监测和保护功能模块。 二、特点 5~23V宽输入工作电压 0.8V的内部基准电压 可以驱动2个N沟道场效应管 高DC增益电压模式PWM控制 快速的瞬态响应 固定的400KHz振荡频率 全动态0~80%的占空系数 内部软启动 自适应非重叠栅极驱动 过流保护，低压闭塞 顺应RoHS规范和100%无铅 三、引脚功能 引脚 名称 功能 类型 1 BOOT 自举 2 DRIVE 驱动使能 O 3 FB 输出反馈 I 4 VCC 供电 5 LGATE 下管栅极驱动 O 6 GND 地 7 UGATE 上管栅极驱动 O 8 PHASE 过流保护下管电压降监测 I Ordering Info Note :Richtek Pb-free and Green products are :► RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.► Suitable for use in SnPb or Pb-free soldering processes. Features • 8V to 23V Wide Range Operation• 0.8V Internal R...
供应50V,0.8A NPN 功率开关三极管C3075
信息内容：TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)2SC3075Switching Regulator and High Voltage SwitchingApplicationsDC-DC Converter ApplicationsDC-AC Converter Applications• Excellent switching times: tr = 1.0 μs (max)tf= 1.5 μs (max), (IC = 0.5 A)• High collector breakdown voltage: VCEO = 400 V
