The AM26LS31 is a quadruple complementary-output line driver designed to meet the requirements of ANSI TIA/EIA-422-B and ITU (formerly CCITT) Recommendation V.11. The 3-state outputs have high-current capability for driving balanced lines such as twisted-pair or parallel-wire transmission lines, and they are in the high-impedance state in the power-off condition. The enable function is common to all four drivers and offers the choice of an active-high or active-low enable (G, G) input. Low-power Schottky circuitry reduces power consumption without sacrificing speed.
requestDetails = [ ['get','http://focus.ti.com.cn/cn/general/docs/sampcartprw.tsp?genericPartNumber=AM26LS31','scpid'] ]; getAsyncData();AM26LS31/DS26LS31 | |
Drivers Per Package | 4 |
Supply Voltage(s)(V) | 5 |
ESD(kV) | 2 |
Signaling Rate(Mbps) | 10 |
ICC(Max)(mA) | 80 |
Footprint | AM26LS31 |
Temp Range(C) | 0 to 70 |
Rating | Catalog |
Operating Temperature Range(°C) | 0 to 70 |
# of TX/RX | 4 TX / 0 RX |
Pin/Package | 16PDIP, 16SO, 16SOIC, 16SSOP |
产品描述: 应用霍尔效应闭环原理的电流传感器,能在电隔离条件下测量直流、交流、脉冲以及各种 不规则波形的电流。 ◆电参数 型号 CSM050AP CSM100AP CSM125AP CSM200AP IPN 原边额定输入电流 50 100 125 200 A IP 原边电流测量范围 0~±150 0~±300 0~±375 0~±600 A ISN 副边额定输出电流 50±0.5% 50±0.5% 125±0.5% 100±0.5% mA KN 匝数比 1:1000 1:2000 1:1000 1:2000 RM 测量电阻(VC=±18V/ IP) 0~100 0~68 0~15 0~12 Ω VC 电源电压 ±12~±18(±5%) V IC 电流消耗 VC=±18V 10+Is mA Vd 绝缘电压 在原边与副边电路之间3KV有效值/50Hz/1分钟 εL 线性度 <0.1 %FS X 精度 ±0.7 % I0 零点失调电流 TA =25℃ <±0.20 mA IOT 失调电流温漂 IP=0 TA = -25~+85℃ ≤±0.005 mA/℃ Tr 响应时间 ...
BSS84P-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionThese P-Channel enhancement mode field effecttransistors are produced using Fairchild’s proprietary,high cell density, DMOS technology. This very highdensity process has been designed to minimize onstateresistance, provide rugged and reliableperformance and fast switching. They can be used, witha minimum of effort, in most applications requiring up to0.13A DC and can deliver current up to 0.52A.This product is particularly suited to low voltageapplications requiring a low current high side switch.Features• −0.13A, −50V. RDS(ON) = 10Ω @ VGS = −5 V• Voltage controlled p-channel small signal switch• High density cell design for low RDS(ON)• High saturation current