供应60V,15A肖特基二极管W2156
| 价 格： | 面议 | |
| 型号/规格： | W2156,FMW-2156,VF20100C | |
| 品牌/商标： | SANKEN | |
| 封装形式： | T0-220F | |
| 环保类别： | 普通型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 散装 | |
| 功率特性： | | |
| 频率特性： | | |
| 整流电流： | A | |
| 反向电压： | V |
供应60V,20A肖特基二极管VF20100C
供应60V,15A肖特基二极管W2156,FMW-2156
肖特基势垒二极管---60V
| VRM(V) | 60 | 封装 | ||||
| VF(V) 值 | 0.62 | 0.69 | 0.7 | 0.72 | ||
| IF(A) | 0.7 | AK 06 | 轴向 (φ2.4/φ0.6) | |||
| EK 06 | 轴向 (φ2.7/φ0.6) | |||||
| 1 | SJPB-D6 | 表面贴装 (SJP) | ||||
| 1.5 | SJPW-F6 | 表面贴装 (SJP) | ||||
| EK 16 | 轴向 (φ2.7/φ0.78) | |||||
| RK 16 | 轴向 (φ4.0/φ0.78) | |||||
| 2 | SJPB-H6 | 表面贴装 (SJP) | ||||
| RK 36 | 轴向 (φ4.0/φ0.98) | |||||
| 3 | SJPB-L6 | 表面贴装 (SJP) | ||||
| 3.5 | RK 46 | 轴向 (φ6.5/φ1.4) | ||||
| 4 | FMB-26 | TO-220F (中间插头) | ||||
| 5 | SPB-G56S | 表面贴装 (D 包装) | ||||
| 6 | FMB-G16L | TO-220F，2Pin | ||||
| 10 | FMW-2106 | FME-2106 | TO-220F，中间插头 | |||
| 15 | FMW-2156 | TO-3PF，中间插头 | ||||
| 20 | FMW-2206 | TO-220F (中间插头) | ||||
| 30 | FMB-2306 | TO-220F (中间插头) | ||||
| FMW-4306 | TO3PF (中间插头) | |||||
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供应60V,20A肖特基二极管VF20100C
信息内容：供应60V,20A肖特基二极管VF20100C 供应60V,15A肖特基二极管W2156,FMW-2156 Dual High-Voltage Trench MOS Barrier Schottky RectifierUltra Low VF = 0.50 V at IF = 5 AFEATURES• Trench MOS Schottky technology• Low forward voltage drop, low powerlosses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF maximumpeak of 245 °C (for TO-263AB package)• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220ABand TO-262AA package)• Component in accordance to RoHS 2002/95/ECand WEEE 2002/96/ECTYPICAL APPLICATIONSFor use in high frequency inverters, switching powersupplies, freewheeling diodes, OR-ing diode, dc-to-dcconverters and reverse battery protection.
供应500V,13A N-CH MOS管FQPF13N50C
信息内容：供应500V,13A N-CH MOS管FQPF13N50C TO-220F FQP13N50/FQPF13N50500V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply, powerfactor correction, electronic lamp ballast based on halfbridge.Features• 12.5A, 500V, RDS(on) = 0.43Ω @VGS = 10 V• Low gate charge ( typical 45 nC)• Low Crss ( typical 25 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
