价 格: | 面议 | |
型号/规格: | IRFP450/IRFP450PBF | |
品牌/商标: | IR | |
封装形式: | TO-3P | |
环保类别: | 无铅环保型 | |
安装方式: | 直插式 | |
包装方式: | 散装 | |
功率特征: | |
14A, 500V, 0.400 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17435.
Features
• 14A, 500V
• r
DS(ON)
= 0.400
Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
参数 说明 Description 3A LDO正压稳压器 Pins/Package TO-263 Vout/Iout 5V/3A Temp.Range -40°C ~ +125°C 重量 1.5G
FDB8447L40V N-Channel PowerTrench® MOSFET40V, 50A, 8.5mΩFeaturesMax rDS(on) = 8.5mΩ at VGS = 10V, ID = 14AMax rDS(on) = 11mΩ at VGS = 4.5V, ID = 11AFast SwitchingRoHS Compliant