Ultra-Fast-Recovery Rectifier Diodes / 超快恢复整流二极管
FEATURES• Low on-state resistanceRDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 24 A)• Low Ciss: Ciss = 1300 pF TYP.• 5 V drive availableABSOLUTE MAXIMUM RATINGS (TA = 25°C)Drain to Source Voltage (VGS = 0 V) VDSS 25 VGate to Source Voltage (VDS = 0 V) VGSS ±20 VDrain Current (DC) (TC = 25°C) ID(DC) ±48 ADrain Current (pulse) Note1 ID(pulse) ±192 ATotal Power Dissipation (TC = 25°C) PT1 29 WTotal Power Dissipation PT2 1.0 WChannel Temperature Tch 150 °CStorage Temperature Tstg −55 to +150 °CSingle Avalanche Current Note2 IAS 22 ASingle Avalanche Energy Note2 EAS 48 mJNotes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V