单刀单掷-常开型,中断10A负载; 单刀单掷-常开+单刀单掷-常闭型中断8A负载; 紧凑:20×15×10mm(长×宽×高);低功耗:200mW;有磁通保护的
或塑料密封的结构;独有的移动线圈电枢减小了继电器尺寸,磁干扰和触点弹跳.
具体型号:
DK1A-3V DK1A-5V DK1A-12V DK1A-24V
DK2A-3V DK2A-5V DK2A-12V DK2A-24V
DK1A1B-3V DK1A1B-5V DK1A1B-12V DK1A1B-24V
DK1A-L2-3V DK1A-L2-5V DK1A-L2-12V DK1A-L2-24V
DK1A1B-L2-3V DK1A1B-L2-5V DK1A1B-L2-12V DK1A1B-L2-24V
1:抗电磁干扰能强,可实现高密度安装。2:耐冲击电压1500V.FCC规格标准,实现耐高压。3:包金双接点,而且低接点振动,可以发挥高接触可靠性。4:品种齐全,用途广泛。型号:DS2Y-S-5V,DS2Y-S-12V,DS2Y-S-24V,DS2Y-S-48VDS2Y-SL2-5V,DS2Y-SL2-12V,DS2Y-SL2-24V,DS2Y-SL2-48VDS1E-S-3V DS1E-S-5V DS1E-S-12V DS1E-S-24V DS2E-S-3V DS2E-S-5V DS2E-S-12V DS2E-S-24V DS4E-S-3V DS4E-S-5V DS4E-S-12V DS4E-S-24V DS1E-SL-3V DS1E-SL-5V DS1E-SL-12V DS1E-SL-24V DS2E-SL-3V DS2E-SL-5V DS2E-SL-12V DS2E-SL-24VDS1E-M-3V DS1E-M-5V DS1E-M-12V DS1E-M-24V DS2E-M-3V DS2E-M-5V DS2E-M-12V DS2E-M-24V DS4E-M-3V DS4E-M-5V DS4E-M-12V DS4E-M-24V DS1E-ML-3V DS1E-ML-5V DS1E-ML-12V DS1E-ML-24V DS2E-ML-3V DS2E-ML-5V DS2E-ML-12V DS2E-ML-24V
1:实行高度5MM,可以与半导体元件安装于同一基板。2:额定消耗电力140MW的高灵敏度。3:低消耗电力实现的低热起电力化(约2UV)(G6H-2F除外)。4:漏磁力线少,可进行高密度实装。5:确保耐冲击电压1500V。6:实现高速动作。7:标准型取得UL,CSA规格。8:超声波清洗对应,备用1绕组闭锁型和2绕组闭锁型。备有完全对应IRS,VPS的表面安装型。 具体型号:TQ2SA-3V TQ2SA-5V TQ2SA-12V TQ2SA-24VTQ2SA-L-3V TQ2SA-L-5V TQ2SA-L-12V TQ2SA-L-24V TQ2SA-L2-3V TQ2SA-L2-5V TQ2SA-L2-12V TQ2SA-L2-24V TQ2SL-L-3V TQ2SL-L-5V TQ2SL-L-12V TQ2SL-L-24V TQ2SL-L2-3V TQ2SL-L2-5V TQ2SL-L2-12V TQ2SL-L2-24V TQ2SS-L-3V TQ2SS-L-5V TQ2SS-L-12V TQ2SS-L-24V TQ2SS-L2-3V TQ2SS-L2-5V TQ2SS-L2-12V TQ2SS-L2-24V