热卖 N沟道 场效应管 UT3N01Z

DCRIPTION
The UT3N01Z us UTC advanced technology to provide excellent
RDS(ON), low gate charge and operation with low gate voltag. This
device’s general purpose is for switching device applications.
FEATUR
* RDS(ON) = 3.7Ω @VGS = 4 V
* Ultra low gate charge ( tical 1.58 nC )
* Low reverse transfer capacitance ( CRSS = tical 2.3 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedns
* Halogen-Free