SILICON TRANSISTOR
2SC3355
HIGH FREQUENCY LOW ISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor digned for low ise
amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.
• Low ise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT 600 mW
Junction Temperature Tj 150 C
Storage Temperature Tstg 65 to +150 C
供应肖特基二管:
1N5822 3A 40V DO-27/DO-201AD
整流直插:
1N4001-1N4007 1N5391-1N5399 RL205-RL207 1N5401-1N5408 6A01-6A10 10A01-10A10
快速管直插：
FR103-FR107 FR153-FR157 FR204-FR207 FR302-FR307 HER102-HER108 HER203-HER208 HER302-HER308 UF4004-UF4007 UF5402-UF5048
肖特基二管:
1N5817-1N5819 SR120-SR1100 SR240-SR2100 SR320-SR3100 1N5820-1N5822 SR520-SR5100
整流贴片:
M1 M4 M7 S2M S2B S2M S3G S3M S3J S3A S2A
肖特基贴片:
SS12-SS14 SS24-SS210 SS34-SS310 RX120-RX140(1N5819 SOD-123)
快速管贴片:
RS1G-RS1M US1G-US1M 1G-1M US2J 2J
稳压管直插 贴片：
0.5W2V-120V 1W3.3V-1W100V 2W3.3V-120V 5W3.3V-200V 2EZ6.8D5 2EZ12D5 2EZ24D5
三管：
TL431 78L05-78L18 79L05-79L-13009 MCR100-6 MCR100-8 MAC97A6 MCA97A8 S8050 S9011-S9018
整流桥：
DB101-DB107 W04-W01 2W01-2W10 05S-10S DB101S-DB107S KBP201-KBP210 KBL401-KBL410 KBU601-KBU610 KBU801-KBU810
GBU601-GBU610 GBU801-GBU810 KBPC801-KBPC810 KBPC1501-KBPC1510 KBPC2501-KBPC2510 KBPC3501-KBPC3510 KBPC5001-KBPC5010