- 品牌/商标：新势力光电
- 企业类型：贸易商
- 新旧程度：全新
- 原产地：德国
雪崩二极管(APD)
新势力光电供应雪崩二极管(APD)，是一种内部增益机制的光电二极管。根据具体应用，可以选择：蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。雪崩二极管广泛应用于：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。
| PIN Series | Special features for Applications |
| Series-11 Optimized for 360-560nm | Blue enhanced for analytical instruments, readout for scintillators. |
| Series-12 Optimized for 500-750nm | Flat frequency response up to 3GHz for precise distance meas., communication. |
| Series-8 Optimized for 750-820nm | High-speed for resistance meas., laser scanner, high speed applications. |
| Series-9 Optimized for 750-930nm | Low rise time for laser rangefinder, LIDAR, basic technology for arrays. |
| Series-10 Optimized for 860-1100nm | Sensitivity at 1064nm for range finder, laser tracker, LIDAR. |
| Series 11: Blue sensitivity enhanced (for biomedical applications) | |||||
| Type No. | Active area | Dark current | Rise time | ||
| Chip | Package | Size | Area | M=100 | 410nm 50Ω |
| mm | mm2 | nA | ns | ||
| AD800-11 | TO52S1 | ?0.8 | 0.5 | 1 | 1 |
| AD1900-11 | TO5i | ?1.95 | 3 | 5 | 2 |
| Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz) | |||||
| Type No. | Active area | Spectral Responsivity | Cut-off frequency | ||
| Chip | Package | Size | Area | 660nm M=100 | 660nm 50Ω |
| mm | mm2 | A/W | GHz | ||
| AD100-12 | LCC6.1 | ?0.1 | 0.008 | 50 | typ. 3, min. 2 |
| AD100-12 | LCC6.1f | ?0.1 | 0.008 | 44 | typ. 3, min. 2 |
| AD100-12 | TO52S1 | ?0.1 | 0.008 | 50 | typ. 3, min. 2 |
| AD230-12 | LCC6.1 | ?0.23 | 0.042 | 50 | typ. 3, min. 2 |
| AD230-12 | LCC6.1f | ?0.23 | 0.042 | 44 | typ. 3, min. 2 |
| AD230-12 | TO52S1 | ?0.23 | 0.042 | 50 | typ. 3, min. 2 |
| AD500-12 | LCC6.1 | ?0.5 | 0.196 | 50 | typ. 3, min. 2 |
| AD500-12 | LCC6.1f | ?0.5 | 0.196 | 44 | typ. 3, min. 2 |
| AD500-12 | TO52S1 | ?0.5 | 0.196 | 50 | typ. 3, min. 2 |
| Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds) | |||||
| Type No. | Active area | Dark current | Rise time | ||
| Chip | Package | Size | Area | M=100 | M=100 20V 50Ω |
| mm | mm2 | nA | ns | ||
| AD100-8 | LCC6.1 | ?0.1 | 0.008 | 0.05 | <0.18 |
| AD100-8 | LCC6.1f | ?0.1 | 0.008 | 0.05 | <0.18 |
| AD100-8 | TO52S1 | ?0.1 | 0.008 | 0.05 | <0.18 |
| AD100-8 | TO52S3 | ?0.1 | 0.008 | 0.05 | <0.18 |
| AD230-8 | LCC6.1 | ?0.23 | 0.04 | 0.3 | 0.18 |
| AD230-8 | LCC6.1f | ?0.23 | 0.04 | 0.3 | 0.18 |
| AD230-8 | TO52S1 | ?0.23 | 0.04 | 0.3 | 0.18 |
| AD230-8 | TO52S3 | ?0.23 | 0.04 | 0.3 | 0.18 |
| AD500-8 | LCC6.1 | ?0.5 | 0.2 | 0.5 | 0.35 |
| AD500-8 | LCC6.1f | ?0.5 | 0.2 | 0.5 | 0.35 |
| AD500-8 | TO52S1 | ?0.5 | 0.2 | 0.5 | 0.35 |
| AD500-8 | TO52S2 | ?0.5 | 0.2 | 0.5 | 0.35 |
| AD500-8 | TO52S3 | ?0.5 | 0.2 | 0.5 | 0.35 |
| AD800-8 | TO52S1 | ?0.8 | 0.5 | 2 | 0.7 |
| AD1100-8 | TO52S1 | ?1.13 | 1 | 4-6 | 1 |
| AD1900-8 | TO5i | ?1.95 | 3 | 15 | 1.4 |
| AD3000-8 | TO5i | ?3 | 7.07 | 30 | 2 |
| AD5000-8 | TO8i | ?5 | 19.63 | 60 | 3 |
| AD230-8-2.3G | TO5 | AD230-8-2.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package. | |||
| AD500-8-1.3G | TO5 | AD500-8-1.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package. | |||
| Series 9: NIR sensitivity enhanced-900nm (specifically for LIDAR and laser rangefinders) | |||||
| Type No. | Active area | Dark current | Rise time | ||
| Chip | Package | Size | Area | M=100 | M=100 |
| mm | mm2 | nA | ns | ||
| AD230-9 | LCC6.1 | ?0.23 | 0.04 | 0.5 | 0.5 |
| AD230-9 | LCC6.1f | ?0.23 | 0.04 | 0.5 | 0.5 |
| AD230-9 | TO52S1 | ?0.23 | 0.04 | 0.5 | 0.5 |
| AD230-9 | TO52S1F2 | ?0.23 | 0.04 | 0.5 | 0.5 |
| AD230-9 | TO52S3 | ?0.23 | 0.04 | 0.5 | 0.5 |
| AD500-9 | LCC6.1 | ?0.5 | 0.2 | 0.8 | 0.55 |
| AD500-9 | LCC6.1f | ?0.5 | 0.2 | 0.8 | 0.55 |
| AD500-9 | TO52S1 | ?0.5 | 0.2 | 0.8 | 0.55 |
| AD500-9 | TO52S1F2 | ?0.5 | 0.2 | 0.8 | 0.55 |
| AD500-9 | TO52S2 | ?0.5 | 0.2 | 0.8 | 0.55 |
| AD500-9 | TO52S3 | ?0.5 | 0.2 | 0.8 | 0.55 |
| AD800-9 | TO52S1 | ?0.8 | 0.5 | 2 | 0.9 |
| AD1100-9 | TO52S1 | ?1.13 | 1 | 4 | 1.3 |
| AD1500-9 | TO5i | ?1.5 | 1.77 | 2 | 2 |
| AD3000-9 | TO5i | ?3 | 7.07 | 30 | 2 |
| AD5000-9 | TO8i | ?5 | 19.63 | 60 | 3 |
| AD230-9-400M | TO5 | AD230-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package. | |||
| AD500-9-400M | TO5 | AD500-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package. | |||
| Multi-Element Array | |||||
| 8AA0.4-9 | SOJ22GL | APD Array 8 Elements, QE>80% at 760-910nm with NTC | |||
| 16AA0.13-9 | SOJ22GL | APD Array 16 Elements, QE>80% at 760-910nm with NTC | |||
| 16AA0.13-9 | DIL18 | APD Array 16 Elements, QE>80% at 760-910nm | |||
| 16AA0.4-9 | SOJ22GL | APD Array 16 Elements, QE>80% at 760-910nm | |||
| 25AA0.04-9 | BGA | APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC | |||
| 25AA0.16-9 | BGA | APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC | |||
| 64AA0.04-9 | BGA | APD Array 64 (8×8) elements, QE>80% at 760-910nm with PTC | |||
| Series 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources) | |||||
| Type No. | Active area | Dark current | Rise time | ||
| Chip | Package | Size | Area | M=100 | M=nm 50Ω |
| mm | mm2 | nA | ns | ||
| AD500-10 | TO5i | ?0.5 | 0.2 | 1.5 | 4 |
| AD800-10 | TO5i | ?0.8 | 0.5 | 3 | 5 |
| AD1500-10 | TO5i | ?1.5 | 1.77 | 7 | 5 |
| AD4000-10 | TO8Si | ?4 | 12.56 | 50 | 6 |
| AD800-10 | TO8Si | High speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA) | |||
| Multi-Element Array | |||||
| QA4000-10 | TO8Si | Quadrant Avalanche Photodiode, High QE at 850-1070nm | |||
updated:2012.07.28
www.NewOpto.com
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